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Palabras clave – provistas por la editorial

solution method; laser treatment; active layer; metal oxide semiconductor thin film transistor; amorphous InGaZnO (a-IGZO); thin-film transistor (TFT); positive bias stress (PBS); annealing atmosphere; oxygen vacancy; foreign material; laser sensor; area charge-coupled device; color filter; thin-film transistor; annealing; dielectric; gate-all-around (GAA); hot-carrier injection (HCI); power consumption; punch-through; reliability; logic transistors; artificial synapse; long-term synaptic plasticity; short-term synaptic plasticity; halide perovskite; flexible electronics; wrinkling; shape-memory polymer; lift-off; hybrid structure; multilayer conductive films; wearable electronics; band-to-band tunneling; epitaxial growth; ground plane region; gate-all-around field-effect-transistors (GAA FETs); nanosheet FETs (NS FETs); parasitic channel leakage; a-IGZO TFTs; sub-gap states; nitrogen-doping; numerical simulation; stability; zinc oxide films; solution-processing electronics; Schottky barrier diodes; semiconductor defects; polarization filter; photonic crystal fiber; surface plasmon resonance; plasmonic sensor; silver; electrodeposition; ITO; morphology; thin films; TiO2; n/a