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High Dielectric Constant Materials: VLSI MOSFET Applications

H.R. Huff ; D.C. Gilmer (eds.)

Resumen/Descripción – provisto por la editorial

No disponible.

Palabras clave – provistas por la editorial

No disponibles.

Disponibilidad
Institución detectada Año de publicación Navegá Descargá Solicitá
No detectada 2005 SpringerLink

Información

Tipo de recurso:

libros

ISBN impreso

978-3-540-21081-8

ISBN electrónico

978-3-540-26462-0

Editor responsable

Springer Nature

País de edición

Reino Unido

Fecha de publicación

Información sobre derechos de publicación

© Springer-Verlag Berlin Heidelberg 2005

Cobertura temática

fisica

Ciencias físicas

materiales

Ingeniería de los materiales

Tabla de contenidos

doi: 10.1007/3-540-26462-0_1

The Economic Implications of Moore's Law

G.D. Hutcheson

The length of this chapter should in no way obscure its simplicity.

Pp. 1-30

doi: 10.1007/3-540-26462-0_2

Brief Notes on the History of Gate Dielectrics in MOS Devices

E. Kooi†; A. Schmitz

The length of this chapter should in no way obscure its simplicity.

Part I - Classical Regime for SiO | Pp. 33-44

doi: 10.1007/3-540-26462-0_3

SiO Based MOSFETS: Film Growth and Si—SiO Interface Properties

E.A. Irene

The length of this chapter should in no way obscure its simplicity.

Part I - Classical Regime for SiO | Pp. 45-90

doi: 10.1007/3-540-26462-0_4

Oxide Reliability Issues

R. Degraeve

The length of this chapter should in no way obscure its simplicity.

Part I - Classical Regime for SiO | Pp. 91-120

doi: 10.1007/3-540-26462-0_5

Gate Dielectric Scaling to 2.0—1.0 nm: SiO and Silicon Oxynitride

S.-H. Lo; Y. Taur

The length of this chapter should in no way obscure its simplicity.

Part II - Transition to Silicon Oxynitrides | Pp. 123-142

doi: 10.1007/3-540-26462-0_6

Optimal Scaling Methodologies and Transistor Performance

T. Skotnicki; F. Boeuf

The length of this chapter should in no way obscure its simplicity.

Part II - Transition to Silicon Oxynitrides | Pp. 143-194

doi: 10.1007/3-540-26462-0_7

Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation

H.-H. Tseng

The length of this chapter should in no way obscure its simplicity.

Part II - Transition to Silicon Oxynitrides | Pp. 195-220

doi: 10.1007/3-540-26462-0_8

Alternative Dielectrics for Silicon-Based Transistors: Selection Via Multiple Criteria

J.-P. Maria

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 223-251

doi: 10.1007/3-540-26462-0_9

Materials Issues for High-k Gate Dielectric Selection and Integration

R.M. Wallace; G.D. Wilk

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 253-286

doi: 10.1007/3-540-26462-0_10

Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks

G.N. Parsons

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 287-310