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High Dielectric Constant Materials: VLSI MOSFET Applications

H.R. Huff ; D.C. Gilmer (eds.)

Resumen/Descripción – provisto por la editorial

No disponible.

Palabras clave – provistas por la editorial

No disponibles.

Disponibilidad
Institución detectada Año de publicación Navegá Descargá Solicitá
No detectada 2005 SpringerLink

Información

Tipo de recurso:

libros

ISBN impreso

978-3-540-21081-8

ISBN electrónico

978-3-540-26462-0

Editor responsable

Springer Nature

País de edición

Reino Unido

Fecha de publicación

Información sobre derechos de publicación

© Springer-Verlag Berlin Heidelberg 2005

Cobertura temática

fisica

Ciencias físicas

materiales

Ingeniería de los materiales

Tabla de contenidos

doi: 10.1007/3-540-26462-0_11

Electronic Structure of Alternative High-k Dielectrics

G. Lucovsky; J.L. Whitten

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 311-357

doi: 10.1007/3-540-26462-0_12

Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon

A.A. Istratov; E.R. Weber

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 359-378

doi: 10.1007/3-540-26462-0_13

High-k Gate Dielectric Deposition Technologies

J.P. Chang

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 379-413

doi: 10.1007/3-540-26462-0_14

Issues in Metal Gate Electrode Selection for Bulk CMOS Devices

V. Misra

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 415-434

doi: 10.1007/3-540-26462-0_15

CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials

L. Colombo; A.L.P. Rotondaro; M.R. Visokay; J.J. Chambers

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 435-481

doi: 10.1007/3-540-26462-0_16

Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films

A.C. Diebold; W.W. Chism

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 483-520

doi: 10.1007/3-540-26462-0_17

Electrical Measurement Issues for Alternative Gate Stack Systems

G.A. Brown

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 521-566

doi: 10.1007/3-540-26462-0_18

High-k Gate Dielectric Materials Integrated Circuit Device Design Issues

Y.-Y. Fan; S.P. Mudanai; W. Chen; L.F. Register; S.K. Banerjee

The length of this chapter should in no way obscure its simplicity.

Part III - Transition to High-k Gate Dielectrics | Pp. 567-604

doi: 10.1007/3-540-26462-0_19

High-k Crystalline Gate Dielectrics: A Research Perspective

F.J. Walker; R.A. McKee

The length of this chapter should in no way obscure its simplicity.

Part IV - Future Directions for Ultimate Scaling Technology Generations | Pp. 607-637

doi: 10.1007/3-540-26462-0_20

High-k Crystalline Gate Dielectrics: An IC Manufacturer's Perspective

R. Droopad; K. Eisenbeiser; A.A. Demkov

The length of this chapter should in no way obscure its simplicity.

Part IV - Future Directions for Ultimate Scaling Technology Generations | Pp. 639-666