Catálogo de publicaciones - libros
High Dielectric Constant Materials: VLSI MOSFET Applications
H.R. Huff ; D.C. Gilmer (eds.)
Resumen/Descripción – provisto por la editorial
No disponible.
Palabras clave – provistas por la editorial
No disponibles.
Disponibilidad
Institución detectada | Año de publicación | Navegá | Descargá | Solicitá |
---|---|---|---|---|
No detectada | 2005 | SpringerLink |
Información
Tipo de recurso:
libros
ISBN impreso
978-3-540-21081-8
ISBN electrónico
978-3-540-26462-0
Editor responsable
Springer Nature
País de edición
Reino Unido
Fecha de publicación
2005
Información sobre derechos de publicación
© Springer-Verlag Berlin Heidelberg 2005
Cobertura temática
Tabla de contenidos
Electronic Structure of Alternative High-k Dielectrics
G. Lucovsky; J.L. Whitten
The length of this chapter should in no way obscure its simplicity.
Part III - Transition to High-k Gate Dielectrics | Pp. 311-357
Physicochemical Properties of Selected 4d, 5d, and Rare Earth Metals in Silicon
A.A. Istratov; E.R. Weber
The length of this chapter should in no way obscure its simplicity.
Part III - Transition to High-k Gate Dielectrics | Pp. 359-378
High-k Gate Dielectric Deposition Technologies
J.P. Chang
The length of this chapter should in no way obscure its simplicity.
Part III - Transition to High-k Gate Dielectrics | Pp. 379-413
Issues in Metal Gate Electrode Selection for Bulk CMOS Devices
V. Misra
The length of this chapter should in no way obscure its simplicity.
Part III - Transition to High-k Gate Dielectrics | Pp. 415-434
CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials
L. Colombo; A.L.P. Rotondaro; M.R. Visokay; J.J. Chambers
The length of this chapter should in no way obscure its simplicity.
Part III - Transition to High-k Gate Dielectrics | Pp. 435-481
Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films
A.C. Diebold; W.W. Chism
The length of this chapter should in no way obscure its simplicity.
Part III - Transition to High-k Gate Dielectrics | Pp. 483-520
Electrical Measurement Issues for Alternative Gate Stack Systems
G.A. Brown
The length of this chapter should in no way obscure its simplicity.
Part III - Transition to High-k Gate Dielectrics | Pp. 521-566
High-k Gate Dielectric Materials Integrated Circuit Device Design Issues
Y.-Y. Fan; S.P. Mudanai; W. Chen; L.F. Register; S.K. Banerjee
The length of this chapter should in no way obscure its simplicity.
Part III - Transition to High-k Gate Dielectrics | Pp. 567-604
High-k Crystalline Gate Dielectrics: A Research Perspective
F.J. Walker; R.A. McKee
The length of this chapter should in no way obscure its simplicity.
Part IV - Future Directions for Ultimate Scaling Technology Generations | Pp. 607-637
High-k Crystalline Gate Dielectrics: An IC Manufacturer's Perspective
R. Droopad; K. Eisenbeiser; A.A. Demkov
The length of this chapter should in no way obscure its simplicity.
Part IV - Future Directions for Ultimate Scaling Technology Generations | Pp. 639-666