Catálogo de publicaciones - revistas

Compartir en
redes sociales

Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/20/9/097601

Local structure distortion and spin Hamiltonian parameters for Cr 3+ −V Zn tetragonal defect centre in Cr 3+

Zi-Yuan Yang

Palabras clave: General Physics and Astronomy.

Pp. 097601

doi: 10.1088/1674-1056/20/9/097701

Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

Zi-Yang Liu; Jin-Cheng Zhang; Huan-Tao Duan; Jun-Shuai Xue; Zhi-Yu Lin; Jun-Cai Ma; Xiao-Yong Xue; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 097701

doi: 10.1088/1674-1056/20/9/097702

Electromechanical-induced antiferroelectric—ferroelectric phase transition in PbLa(Zr,Sn,Ti)O 3 ceramic

Chong-Hui Zhang; Zhuo Xu; Jun-Jie Gao; Chang-Jun Zhu; Xi Yao

Palabras clave: General Physics and Astronomy.

Pp. 097702

doi: 10.1088/1674-1056/20/9/097703

Bipolar resistive switching in Cr-doped TiO x thin films

Zhong-Wen Xing

Palabras clave: General Physics and Astronomy.

Pp. 097703

doi: 10.1088/1674-1056/20/9/098101

Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy

Yan-Hao Du; Jie-Jun Wu; Wei-Ke Luo; Tong Han; Yue-Bin Tao; Zhi-Jian Yang; Tong-Jun Yu; Guo-Yi Zhang

Palabras clave: General Physics and Astronomy.

Pp. 098101

doi: 10.1088/1674-1056/20/9/098501

A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

Xiao-Bo Xu; Kai-Xuan Xu; He-Ming Zhang; Shan-Shan Qin

Palabras clave: General Physics and Astronomy.

Pp. 098501

doi: 10.1088/1674-1056/20/9/098502

Size and temperature effects on electric properties of CdTe/ZnTe quantum rings

Woo-Pyo Hong; Seoung-Hwan Park

Palabras clave: General Physics and Astronomy.

Pp. 098502

doi: 10.1088/1674-1056/20/9/098503

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

Tai-Ping Lu; Shu-Ti Li; Kang Zhang; Chao Liu; Guo-Wei Xiao; Yu-Gang Zhou; Shu-Wen Zheng; Yi-An Yin; Le-Juan Wu; Hai-Long Wang; Xiao-Dong Yang

Palabras clave: General Physics and Astronomy.

Pp. 098503

doi: 10.1088/1674-1056/20/9/098901

Speeding up the MATLAB complex networks package using graphic processors

Bai-Da Zhang; Yu-Hua Tang; Jun-Jie Wu; Xin Li

Palabras clave: General Physics and Astronomy.

Pp. 098901

doi: 10.1088/1674-1056/20/9/099201

Remote sensing of atmospheric duct parameters using simulated annealing

Xiao-Feng Zhao; Si-Xun Huang; Jie Xiang; Wei-Lai Shi

Palabras clave: General Physics and Astronomy.

Pp. 099201