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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/20/9/097203

The effect of a HfO 2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

Wei Mao; Cui Yang; Yue Hao; Xiao-Hua Ma; Chong Wang; Jin-Cheng Zhang; Hong-Xia Liu; Zhi-Wei Bi; Sheng-Rui Xu; Lin-An Yang; Ling Yang; Kai Zhang; Nai-Qian Zhang; Yi Pei

Palabras clave: General Physics and Astronomy.

Pp. 097203

doi: 10.1088/1674-1056/20/9/097301

The edges and terrace effect of Ag particles on optical resonance absorption property

Ya-Li Zhao; Ya-Qiang Gui; Zhen-Lin Zhang; Fu-Hua Ma; Xiao-Li Xu; Xiao-Liang Xu

Palabras clave: General Physics and Astronomy.

Pp. 097301

doi: 10.1088/1674-1056/20/9/097302

Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Xiao-Hua Ma; Ping Ma; Ying Jiao; Li-Yuan Yang; Ji-Gang Ma; Qiang He; Sha-Sha Jiao; Jin-Cheng Zhang; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 097302

doi: 10.1088/1674-1056/20/9/097303

Flat-band voltage shift in metal-gate/high- k /Si stacks

An-Ping Huang; Xiao-Hu Zheng; Zhi-Song Xiao; Zhi-Chao Yang; Mei Wang; K. Chu Paul; Xiao-Dong Yang

Palabras clave: General Physics and Astronomy.

Pp. 097303

doi: 10.1088/1674-1056/20/9/097304

An improvement to computational efficiency of the drain current model for double-gate MOSFET

Xing-Ye Zhou; Jian Zhang; Zhi-Ze Zhou; Li-Ning Zhang; Chen-Yue Ma; Wen Wu; Wei Zhao; Xing Zhang

Palabras clave: General Physics and Astronomy.

Pp. 097304

doi: 10.1088/1674-1056/20/9/097305

Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

Yan Pu; Lei Pang; Xiao-Juan Chen; Ting-Ting Yuan; Wei-Jun Luo; Xin-Yu Liu

Palabras clave: General Physics and Astronomy.

Pp. 097305

doi: 10.1088/1674-1056/20/9/097306

Dynamical localization effect in a coupled quantum dot array driven by an AC magnetic field

Jun-Jie Xia; Yi-Hang Nie

Palabras clave: General Physics and Astronomy.

Pp. 097306

doi: 10.1088/1674-1056/20/9/097501

Magnetic phase transitions and magnetocaloric effect in the Fe-doped MnNiGe alloys

Cheng-Liang Zhang; Dun-Hui Wang; Jian Chen; Ting-Zhi Wang; Guang-Xi Xie; Chun Zhu

Palabras clave: General Physics and Astronomy.

Pp. 097501

doi: 10.1088/1674-1056/20/9/097502

Ferrimagnetism induced by asymmetrical ferromagnetic next-nearest-neighbour exchange interactions in an antiferromagnetic spin-1/2 zigzag chain

Zhong-Long Wang; Hua-Hua Fu

Palabras clave: General Physics and Astronomy.

Pp. 097502

doi: 10.1088/1674-1056/20/9/097503

Effects of Fe 2+ substitution on magnetic and dielectric properties of CdCr 2 S 4

Li-Qin Yan; Yang Sun; Lun-Hua He; Fang-Wei Wang; Jun Shen

Palabras clave: General Physics and Astronomy.

Pp. 097503