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long pulse laser; plasma plume; composite materials; CFRP; GFRP; 1989 nm; Ho:YAP; AO Q-switched laser; long-wave infrared; ZnGeP2 crystal; Ho:YAG MOPA; nonlinear infrared optical crystal; AgGaGe5Se12 crystal; Bridgman growth method; solid-state; diode-pumped; Q-switched; infrared and far-infrared lasers; surface plasmon polaritons (SPPs); metal-insulator-metal (MIM) waveguide; Fano line-shapes; refractive index sensing; millisecond pulse laser; silicon avalanche photodiode (Si-APD); external capacitance; photocurrent; carrier flow; lowering of the barrier; APD; Dy:CaF2-SrF2; crystal growth; temperature gradient technology; midinfrared crystal; Sellmeier dispersion formula; mid-infrared photonics; chalcopyrite semiconductors; orthorhombic ternary chalcogenides; harmonic generation; continuum generation; group velocity matching; infrared pulse laser; fused silica; plasma; interaction between laser and matter; numerical simulation; plasma expansion velocity; 2.78 μm mid-infrared emission; Er/Tm; PbF2 laser crystal; energy transfer mechanism; first-principles calculation; β-Ga2O3 crystal; optical floating zone; saturable absorber; Q-switch; laser-induced damage threshold; ZnGeP2; interference coating; magnetorheological polish; laser; Ho:YVO4; double-pass-pumping; laser diode; n/a