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quantum mechanical; n/a; neuromorphic computation; off-current (Ioff); double-gate tunnel field-effect-transistor; topological insulator; back current blocking layer (BCBL); CMOS power amplifier IC; information integration; distributed Bragg; spike-timing-dependent plasticity; electron affinity; enhancement-mode; current collapse; gallium nitride (GaN); band-to-band tunneling; vertical field-effect transistor (VFET); ionic liquid; luminescent centres; thermal coupling; vision localization; PC1D; UAV; ZnO/Si; dual-switching transistor; memristor; field-effect transistor; higher order synchronization; shallow trench isolation (STI); memristive device; on-current (Ion); low voltage; reflection transmision method; dielectric layer; source/drain (S/D); high efficiency; nanostructure synthesis; InAlN/GaN heterostructure; supercapacitor; high-electron mobility transistor (HEMTs); heterojunction; p-GaN; recessed channel array transistor (RCAT); gate field effect; charge injection; saddle FinFET (S-FinFET); L-shaped tunnel field-effect-transistor; conductivity; energy storage; hierarchical; PECVD; sample grating; MISHEMT; bistability; threshold voltage (VTH); bandgap tuning; oscillatory neural networks; UV irradiation; Mott transition; third harmonic tuning; topological magnetoelectric effect; cross-gain modulation; 2D material; solar cells; silicon on insulator (SOI); Green’s function; optoelectronic devices; semiconductor optical amplifier; ZnO films; graphene; AlGaN/GaN; polarization effect; two-photon process; conductive atomic force microscopy (cAFM); 2DEG density; vanadium dioxide; interface traps; potential drop width (PDW); pattern recognition; drain-induced barrier lowering (DIBL); atomic layer deposition (ALD); normally off power devices; gate-induced drain leakage (GIDL); insulator–metal transition (IMT); zinc oxide; synaptic device; subthreshold slope (SS); landing; silicon; corner-effect; conditioned reflex; quantum dot; gallium nitride; bismuth ions; conduction band offset; variational form