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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

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Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

Fei Xiong; Tao Yang; Zhao-Ning Song; Pei-Zhi Yang

Palabras clave: General Physics and Astronomy.

Pp. 058104

Growth and characterization of single crystals of the quaternary TlGaSeS compound

S. R. Alharbi

Palabras clave: General Physics and Astronomy.

Pp. 058105

Fabrication of ZnO nanoparticles-embedded hydrogenated diamond-like carbon films by electrochemical deposition technique

Pei-Zeng Zhang; Rui-Shan Li; Xiao-Jun Pan; Er-Qing Xie

Palabras clave: General Physics and Astronomy.

Pp. 058106

Dynamic aggregation evolution of competitive societies of cooperative and noncooperative agents

Zhen-Quan Lin; Gao-Xiang Ye

Palabras clave: General Physics and Astronomy.

Pp. 058201

Coupling effects of depletion interactions in a three-sphere colloidal system

Ze-Shun Chen; Gang Dai; Hai-Xia Gao; Chang-Ming Xiao

Palabras clave: General Physics and Astronomy.

Pp. 058202

Dependence of effective screening length in granular columns on bead and silo sizes and their ratio

Abdul Qadir; Madad Ali Shah; Saeed Ahmed Khan

Palabras clave: General Physics and Astronomy.

Pp. 058301

Analytical models of lateral power devices with arbitrary vertical doping profiles in the drift region

Ting-Ting Hua; Yu-Feng Guo; Ying Yu; Gene Sheu; Tong Jian; Jia-Fei Yao

Palabras clave: General Physics and Astronomy.

Pp. 058501

Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer

Chao Liu; Zhi-Wei Ren; Xin Chen; Bi-Jun Zhao; Xing-Fu Wang; Yi-An Yin; Shu-Ti Li

Palabras clave: General Physics and Astronomy.

Pp. 058502

Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer

Fang Zhao; Guang-Rui Yao; Jing-Jing Song; Bin-Bin Ding; Jian-Yong Xiong; Chen Su; Shu-Wen Zheng; Tao Zhang; Guang-Han Fan

Palabras clave: General Physics and Astronomy.

Pp. 058503

The effect of dimerization on the magnetoresistance in organic spin valves

Hui Wang; Gui-Chao Hu; Jun-Feng Ren

Palabras clave: General Physics and Astronomy.

Pp. 058504