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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/22/5/057101

First-principles study on nonlocal ferromagnetism in (Cu, N)-codoped ZnO

Guo-Ping Qin; Xin-Qiang Wang; Ji Zheng; Chun-Yang Kong; Hai-Bo Ruan; Wan-Jun Li; Yong-Hong Zhao; Xiang-Dan Meng

Palabras clave: General Physics and Astronomy.

Pp. 057101

doi: 10.1088/1674-1056/22/5/057102

Structures and phase transitions of ScH3under high pressure

Bo Kong; Zhu-Wen Zhou; De-Liang Chen; Rong-Feng Ling-hu

Palabras clave: General Physics and Astronomy.

Pp. 057102

doi: 10.1088/1674-1056/22/5/057103

Structural, magnetic, electronic, and elastic properties of face-centered cubic PuHx(x= 2, 3): GGA (LSDA) +U+ SO

Yong Guo; Juan-Juan Ai; Tao Gao; Bing-Yun Ao

Palabras clave: General Physics and Astronomy.

Pp. 057103

doi: 10.1088/1674-1056/22/5/057104

Energy transfer and correlation dynamics in a three-quasi-spin-pigment system

Yin-Ping Zhang; Hong-Rong Li; Ai-Ping Fang; Hao Chen; Fu-Li Li

Palabras clave: General Physics and Astronomy.

Pp. 057104

doi: 10.1088/1674-1056/22/5/057105

Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

Bo Liu; Sen Zhang; Jia-Yun Yin; Xiong-Wen Zhang; Shao-Bo Dun; Zhi-Hong Feng; Shu-Jun Cai

Palabras clave: General Physics and Astronomy.

Pp. 057105

doi: 10.1088/1674-1056/22/5/057106

High sensitivity Hall devices with AlSb/InAs quantum well structures

Yang Zhang; Yu-Wei Zhang; Cheng-Yan Wang; Min Guan; Li-Jie Cui; Yi-Yang Li; Bao-Qiang Wang; Zhan-Ping Zhu; Yi-Ping Zeng

Palabras clave: General Physics and Astronomy.

Pp. 057106

doi: 10.1088/1674-1056/22/5/057201

Electrical transport and thermoelectric properties of Ni-doped perovskite-type YCo1−xNixO3(0 ≤x≤ 0.07) prepared by sol-gel process

Yi Liu; Hai-Jin Li; Qing Zhang; Yong Li; Hou-Tong Liu

Palabras clave: General Physics and Astronomy.

Pp. 057201

doi: 10.1088/1674-1056/22/5/057202

Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

Sheng-Dong Ren; Bin-Cheng Li; Li-Feng Gao; Qian Wang

Palabras clave: General Physics and Astronomy.

Pp. 057202

doi: 10.1088/1674-1056/22/5/057301

Effects of a bar on optical transmission through Z-shaped metallic slit arrays

Cai-Ni Wu; Hong-Jian Li; Xiao Peng; Guang-Tao Cao; Zhi-Min Liu

Palabras clave: General Physics and Astronomy.

Pp. 057301

doi: 10.1088/1674-1056/22/5/057302

Effects of polarization on intersubband transitions of AlxGa1−xN/GaN multi-quantum wells

Wu Tian; Wei-Yi Yan; Hui Xiong; Jian-Nan Dai; Yan-Yan Fang; Zhi-Hao Wu; Chen-Hui Yu; Chang-Qin Chen

Palabras clave: General Physics and Astronomy.

Pp. 057302