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Chinese Physics B
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.Palabras clave – provistas por la editorial
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Historia
Continúa: Chinese Physics
Disponibilidad
| Institución detectada | Período | Navegá | Descargá | Solicitá |
|---|---|---|---|---|
| No detectada | desde ene. 2008 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
1674-1056
Editor responsable
Chinese Physical Society (CPS)
País de edición
China
Fecha de publicación
2008-
Cobertura temática
Tabla de contenidos
Structural and electrical properties of Ga–Te systems under high pressure*
Youchun Wang; Fubo Tian; Da Li; Defang Duan; Hui Xie; Bingbing Liu; Qiang Zhou; Tian Cui
<jats:title>Abstract</jats:title> <jats:p>First-principles evolutionary calculation was performed to search for all probable stable Ga–Te compounds at extreme pressure. In addition to the well-known structures of <jats:italic>P</jats:italic>6<jats:sub>3</jats:sub>/<jats:italic>mmc</jats:italic> and <jats:italic>Fm</jats:italic>-3<jats:italic>m</jats:italic> GaTe and <jats:italic>I</jats:italic>4/<jats:italic>m</jats:italic> Ga<jats:sub>2</jats:sub>Te<jats:sub>5</jats:sub>, several new structures were uncovered at high pressure, namely, orthorhombic <jats:italic>I</jats:italic>4/<jats:italic>mmm</jats:italic> GaTe<jats:sub>2</jats:sub> and monoclinic <jats:italic>C</jats:italic>2/<jats:italic>m</jats:italic> GaTe<jats:sub>3</jats:sub>, and all the Ga–Te structures stabilize up to a maximum pressure of 80 GPa. The calculation of the electronic energy band indicated that the high-pressure phases of the Ga–Te system are metallic, whereas the low-pressure phases are semiconductors. The electronic localization functions (ELFs) of the Ga–Te system were also calculated to explore the bond characteristics. The results showed that a covalent bond is formed at low pressure, however, this bond disappears at high pressure, and an ionic bond is formed at extreme pressure.</jats:p>
Palabras clave: General Physics and Astronomy.
Pp. 056104
A revised jump-diffusion and rotation-diffusion model
Hua Li; Yu-Hang Chen; Bin-Ze Tang
<jats:title>Abstract</jats:title> <jats:p>Quasi-elastic neutron scattering (QENS) has many applications that are directly related to the development of high-performance functional materials and biological macromolecules, especially those containing some water. The analysis method of QENS spectra data is important to obtain parameters that can explain the structure of materials and the dynamics of water. In this paper, we present a revised jump-diffusion and rotation-diffusion model (rJRM) used for QENS spectra data analysis. By the rJRM, the QENS spectra from a pure magnesium-silicate-hydrate (MSH) sample are fitted well for the <jats:italic>Q</jats:italic> range from 0.3 Å<jats:sup>−1</jats:sup> to 1.9 Å<jats:sup>−1</jats:sup> and temperatures from 210 K up to 280 K. The fitted parameters can be divided into two kinds. The first kind describes the structure of the MSH sample, including the ratio of immobile water (or bound water) <jats:italic>C</jats:italic> and the confining radius of mobile water <jats:italic>a</jats:italic> <jats:sub>0</jats:sub>. The second kind describes the dynamics of confined water in pores contained in the MSH sample, including the translational diffusion coefficient <jats:italic>D</jats:italic> <jats:sub>t</jats:sub>, the average translational residence time <jats:italic>τ</jats:italic> <jats:sub>0</jats:sub>, the rotational diffusion coefficient <jats:italic>D</jats:italic> <jats:sub>r</jats:sub>, and the mean squared displacement (MSD) <jats:inline-formula> <jats:tex-math><?CDATA $\langle {u}^{2}\rangle $?></jats:tex-math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo stretchy="false">〈</mml:mo> <mml:msup> <mml:mrow> <mml:mi>u</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msup> <mml:mo stretchy="false">〉</mml:mo> </mml:math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="cpb_28_5_056105_ieqn1.gif" xlink:type="simple" /> </jats:inline-formula>. The rJRM is a new practical method suitable to fit QENS spectra from porous materials, where hydrogen atoms appear in both solid and liquid phases.</jats:p>
Palabras clave: General Physics and Astronomy.
Pp. 056105
Studying the charge carrier properties in CuInS2 films via femtosecond transient absorption and nanosecond transient photocurrents*
Mingrui Tan; Qinghui Liu; Ning Sui; Zhihui Kang; Liquan Zhang; Hanzhuang Zhang; Wenquan Wang; Qiang Zhou; Yinghui Wang
<jats:title>Abstract</jats:title> <jats:p>The carrier behavior in CuInS<jats:sub>2</jats:sub> thin films at femtosecond and microsecond time scales is discussed in detail. Transient absorption data suggests that the photo-generated carriers relax rapidly accompanied by a change in energy. The photo-generated charge carriers are extracted by a bias electric field <jats:italic>E</jats:italic> in the nanosecond transient photocurrent system. An applied <jats:italic>E</jats:italic> improves the efficiency of photon conversion to charge carriers and enhances the velocity of the extracted charge carriers. In addition, there exists a threshold of illumination intensity in the extraction process of charge carriers in the CuInS<jats:sub>2</jats:sub> thin film, above which carrier recombination occurs. The corresponding loss further increases with illumination intensity and the recombination rate is almost independent of <jats:italic>E</jats:italic>. Our results provide useful insights into the characteristics of carriers in the CuInS<jats:sub>2</jats:sub> thin film and are important for the operation of optoelectronic devices realized with these films.</jats:p>
Palabras clave: General Physics and Astronomy.
Pp. 056106
Low-temperature growth of large-scale, single-crystalline graphene on Ir(111)*
Hui Guo; Hui Chen; Yande Que; Qi Zheng; Yu-Yang Zhang; Li-Hong Bao; Li Huang; Ye-Liang Wang; Shi-Xuan Du; Hong-Jun Gao
<jats:title>Abstract</jats:title> <jats:p>Iridium is a promising substrate for self-limiting growth of graphene. However, single-crystalline graphene can only be fabricated over 1120 K. The weak interaction between graphene and Ir makes it challenging to grow graphene with a single orientation at a relatively low temperature. Here, we report the growth of large-scale, single-crystalline graphene on Ir(111) substrate at a temperature as low as 800 K using an oxygen-etching assisted epitaxial growth method. We firstly grow polycrystalline graphene on Ir. The subsequent exposure of oxygen leads to etching of the misaligned domains. Additional growth cycle, in which the leftover aligned domain serves as a nucleation center, results in a large-scale and single-crystalline graphene layer on Ir(111). Low-energy electron diffraction, scanning tunneling microscopy, and Raman spectroscopy experiments confirm the successful growth of large-scale and single-crystalline graphene. In addition, the fabricated single-crystalline graphene is transferred onto a SiO<jats:sub>2</jats:sub>/Si substrate. Transport measurements on the transferred graphene show a carrier mobility of about <jats:inline-formula> <jats:tex-math><?CDATA $3300\,{\mathrm{cm}}^{2}\cdot {{\rm{V}}}^{-1}\cdot {{\rm{s}}}^{-1}$?></jats:tex-math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mn>3300</mml:mn> <mml:mspace width="0.25em" /> <mml:msup> <mml:mrow> <mml:mi>cm</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msup> <mml:mo>·</mml:mo> <mml:msup> <mml:mrow> <mml:mi mathvariant="normal">V</mml:mi> </mml:mrow> <mml:mrow> <mml:mo>−</mml:mo> <mml:mn>1</mml:mn> </mml:mrow> </mml:msup> <mml:mo>·</mml:mo> <mml:msup> <mml:mrow> <mml:mi mathvariant="normal">s</mml:mi> </mml:mrow> <mml:mrow> <mml:mo>−</mml:mo> <mml:mn>1</mml:mn> </mml:mrow> </mml:msup> </mml:math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="cpb_28_5_056107_ieqn1.gif" xlink:type="simple" /> </jats:inline-formula>. This work provides a way for the synthesis of large-scale, high-quality graphene on weak-coupled metal substrates.</jats:p>
Palabras clave: General Physics and Astronomy.
Pp. 056107
Raman scattering study of magnetic layered MPS3 crystals ( M = Mn , Fe, Ni)*
Yi-Meng Wang; Jian-Feng Zhang; Cheng-He Li; Xiao-Li Ma; Jian-Ting Ji; Feng Jin; He-Chang Lei; Kai Liu; Wei-Lu Zhang; Qing-Ming Zhang
<jats:title>Abstract</jats:title> <jats:p>We report a comprehensive Raman scattering study on layered <jats:italic>M</jats:italic>PS<jats:sub>3</jats:sub> (<jats:italic>M</jats:italic>=Mn, Fe, Ni), a two-dimensional magnetic compound with weak van der Waals interlayer coupling. The observed Raman phonon modes have been well assigned by the combination of first-principles calculations and the polarization-resolved spectra. Careful symmetry analysis on the angle-dependent spectra demonstrates that the crystal symmetry is strictly described by C<jats:sub>2h</jats:sub> but can be simplified to D<jats:sub>3d</jats:sub> with good accuracy. Interestingly, the three compounds share exactly the same lattice structure but show distinct magnetic structures. This provides us with a unique opportunity to study the effect of different magnetic orders on lattice dynamics in <jats:italic>M</jats:italic>PS<jats:sub>3</jats:sub>. Our results reveal that the in-plane Néel antiferromagnetic (AF) order in MnPS<jats:sub>3</jats:sub> favors a spin–phonon coupling compared to the in-plane zig-zag AF in NiPS<jats:sub>3</jats:sub> and FePS<jats:sub>3</jats:sub>. We have discussed the mechanism in terms of the folding of magnetic Brillouin zones. Our results provide insights into the relation between lattice dynamics and magnetism in the layered <jats:italic>M</jats:italic>P<jats:italic>X</jats:italic> <jats:sub>3</jats:sub> (<jats:italic>M</jats:italic>=transition metal, <jats:italic>X</jats:italic>=S, Se) family and shed light on the magnetism of monolayer <jats:italic>M</jats:italic>P<jats:italic>X</jats:italic> <jats:sub>3</jats:sub> materials.</jats:p>
Palabras clave: General Physics and Astronomy.
Pp. 056301
Variational and diffusion Monte Carlo simulations of a hydrogen molecular ion in a spherical box*
Xuehui Xiao; Kuo Bao; Youchun Wang; Hui Xie; Defang Duan; Fubo Tian; Tian Cui
<jats:title>Abstract</jats:title> <jats:p>The variational and diffusion Monte Carlo approaches are used to study the ground-state properties of a hydrogen molecular ion in a spheroidal box. In this work, we successfully treat the zero-point motion of protons in the same formalism with as of electrons and avoid the Born–Oppenheimer approximation in density function theory. The study shows that the total energy increases with the decrease in volume, and that the distance between protons decreases as the pressure increases. Considering the motion of protons, the kinetic energy of the electron is higher than that of the fixed model under the same conditions and increases by 5%. The kinetic energy of the proton is found to be small under high pressure, which is only a fraction of the kinetic energy of the electron.</jats:p>
Palabras clave: General Physics and Astronomy.
Pp. 056401
Surface stabilized cubic phase of CsPbI3 and CsPbBr3 at room temperature*
Feng Yang; Cong Wang; Yuhao Pan; Xieyu Zhou; Xianghua Kong; Wei Ji
<jats:title>Abstract</jats:title> <jats:p>Inorganic halide perovskites CsPb<jats:italic>X</jats:italic> <jats:sub>3</jats:sub> (<jats:italic>X</jats:italic> = I, Br) have attracted tremendous attention in solar cell applications. However, the bulk form of the cubic phase CsPb<jats:italic>X</jats:italic> <jats:sub>3</jats:sub>, which offers moderate direct bandgaps, is metastable at room temperature and tends to transform into a tetragonal or orthorhombic phase. Here, our density functional theory calculation results found that the surface energies of the cubic phase are smaller than those of the orthorhombic phase, although the bulk counterpart of the cubic phase is less stable than that of the orthorhombic phase. These results suggest a surface stabilization strategy to maintain the stability of the cubic phase at room temperature that an enlarged portion of surfaces shall change the relative stability of the two phases in nanostructured CsPb<jats:italic>X</jats:italic> <jats:sub>3</jats:sub>. This strategy, which may potentially solve the long-standing stability issue of cubic CsPb<jats:italic>X</jats:italic> <jats:sub>3</jats:sub>, was demonstrated to be feasible by our calculations in zero-, one-, and two-dimensional nanostructures. In particular, confined sizes from few to tens of nanometers could keep the cubic phase as the most thermally favored form at room temperature. Our predicted values in particular cases, such as the zero-dimensional form of CsPbI<jats:sub>3</jats:sub>, are highly consistent with experimental values, suggesting that our model is reasonable and our results are reliable. These predicted critical sizes give the upper and lower limits of the confined sizes, which may guide experimentalists to synthesize these nanostructures and promote likely practical applications such as solar cells and flexible displays using CsPb<jats:italic>X</jats:italic> <jats:sub>3</jats:sub> nanostructures.</jats:p>
Palabras clave: General Physics and Astronomy.
Pp. 056402
Conductive property of Zr0.1Fe0.9V1.1Mo0.9O7 with low thermal expansion*
Xiaoke He; Heng Qi; Qi Xu; Xiansheng Liu; Lei Xu; Baohe Yuan
<jats:title>Abstract</jats:title> <jats:p>Low thermal expansion materials are mostly ceramics with low conductive property, which limits their applications in electronic devices. The poor conductive property of ceramic ZrV<jats:sub>2</jats:sub>O<jats:sub>7</jats:sub> could be improved by bi-substitution of Fe and Mo for Zr and V, accompanied with low thermal expansion. Zr<jats:sub>0.1</jats:sub>Fe<jats:sub>0.9</jats:sub>V<jats:sub>1.1</jats:sub>Mo<jats:sub>0.9</jats:sub>O<jats:sub>7</jats:sub> has electrical conductivity of 8.2×10<jats:sup>−5</jats:sup> S/cm and 9.41×10<jats:sup>−4</jats:sup> S/cm at 291 K and 623 K, respectively. From 291 K to 413 K, thermal excitation leads to the increase of carrier concentration, which causes the rapid decrease of resistance. At 413–533 K, the conductivity is unchanged due to high scattering probability and a slowing increase of carrier concentration. The conductivity rapidly increases again from 533 K to 623 K due to the intrinsic thermal excitation. The thermal expansion coefficient of Zr<jats:sub>0.1</jats:sub>Fe<jats:sub>0.9</jats:sub>V<jats:sub>1.1</jats:sub>Mo<jats:sub>0.9</jats:sub>O<jats:sub>7</jats:sub> is as low as 0.72×10<jats:sup>−6</jats:sup> K<jats:sup>−1</jats:sup> at 140–700 K from the dilatometer measurement. These properties suggest that Zr<jats:sub>0.1</jats:sub>Fe<jats:sub>0.9</jats:sub>V<jats:sub>1.1</jats:sub>Mo<jats:sub>0.9</jats:sub>O<jats:sub>7</jats:sub> has attractive application in electronic components.</jats:p>
Palabras clave: General Physics and Astronomy.
Pp. 056501
Spatiotemporal Bloch states of a spin–orbit coupled Bose–Einstein condensate in an optical lattice*
Ya-Wen Wei; Chao Kong; Wen-Hua Hai
<jats:title>Abstract</jats:title> <jats:p>We study the spatiotemporal Bloch states of a high-frequency driven two-component Bose–Einstein condensate (BEC) with spin–orbit coupling (SOC) in an optical lattice. By adopting the rotating-wave approximation (RWA) and applying an exact trial-solution to the corresponding quasistationary system, we establish a different method for tuning SOC via external field such that the existence conditions of the exact particular solutions are fitted. Several novel features related to the exact states are demonstrated; for example, SOC leads to spin–motion entanglement for the spatiotemporal Bloch states, SOC increases the population imbalance of the two-component BEC, and SOC can be applied to manipulate the stable atomic flow which is conducive to control quantum transport of the BEC for different application purposes.</jats:p>
Palabras clave: General Physics and Astronomy.
Pp. 056701
Epitaxial fabrication of two-dimensional TiTe2 monolayer on Au(111) substrate with Te as buffer layer*
Zhipeng Song; Bao Lei; Yun Cao; Jing Qi; Hao Peng; Qin Wang; Li Huang; Hongliang Lu; Xiao Lin; Ye-Liang Wang; Shixuan Du; Hong-Jun Gao
<jats:title>Abstract</jats:title> <jats:p>Two-dimensional (2D) materials provide a platform to exploit the novel physical properties of functional nanodevices. Here, we report on the formation of a new 2D layered material, a well-ordered monolayer TiTe<jats:sub>2</jats:sub>, on a Au(111) surface by molecular beam epitaxy (MBE). Low-energy electron diffraction (LEED) measurements of the samples indicate that the TiTe<jats:sub>2</jats:sub> film forms <jats:inline-formula> <jats:tex-math><?CDATA $(\sqrt{3}\times \sqrt{7})$?></jats:tex-math> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo stretchy="false">(</mml:mo> <mml:msqrt> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> </mml:msqrt> <mml:mo>×</mml:mo> <mml:msqrt> <mml:mrow> <mml:mn>7</mml:mn> </mml:mrow> </mml:msqrt> <mml:mo stretchy="false">)</mml:mo> </mml:math> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="cpb_28_5_056801_ieqn1.gif" xlink:type="simple" /> </jats:inline-formula> superlattice with respect to the Au(111) substrate, which has three different orientations. Scanning tunneling microscopy (STM) measurements clearly show three ordered domains consistent with the LEED patterns. Density functional theory (DFT) calculations further confirm the formation of 2H-TiTe<jats:sub>2</jats:sub> monolayer on the Au(111) surface with Te as buffer layer. The fabrication of this 2D layered heterostructure expands 2D material database, which may bring new physical properties for future applications.</jats:p>
Palabras clave: General Physics and Astronomy.
Pp. 056801