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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

Nonpolar a -plane light-emitting diode with an in-situ SiN x

Hao Fang; Hao Long; Li-Wen Sang; Sheng-Li Qi; Chang Xiong; Tong-Jun Yu; Zhi-Jian Yang; Guo-Yi Zhang

Palabras clave: General Physics and Astronomy.

Pp. 017804

Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

Si Quan; Yue Hao; Xiao-Hua Ma; Hui-You Yu

Palabras clave: General Physics and Astronomy.

Pp. 018101

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

Ji-Fang He; Zhi-Chuan Niu; Xiu-Ying Chang; Hai-Qiao Ni; Yan Zhu; Mi-Feng Li; Xiang-Jun Shang

Palabras clave: General Physics and Astronomy.

Pp. 018102

First-principles studies of Mn-doped LiCoPO 4

Zhi-Ping Lin; Yan-Ming Zhao; Yu-Jun Zhao

Palabras clave: General Physics and Astronomy.

Pp. 018201

A statistical RCL interconnect delay model taking account of process variations

Zhang-Ming Zhu; Da-Jing Wan; Yin-Tang Yang; Yun-Fei En

Palabras clave: General Physics and Astronomy.

Pp. 018401

Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

Liang Chen; Wan-Rong Zhang; Dong-Yue Jin; Pei Shen; Hong-Yun Xie; Chun-Bao Ding; Ying Xiao; Bo-Tao Sun; Ren-Qing Wang

Palabras clave: General Physics and Astronomy.

Pp. 018501

Analytical base-collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator

Xiao-Bo Xu; He-Ming Zhang; Hui-Yong Hu; Jian-Li Ma; Li-Jun Xu

Palabras clave: General Physics and Astronomy.

Pp. 018502

Multifunctional silicon-based light emitting device in standard complementary metal—oxide—semiconductor technology

Wei Wang; Bei-Ju Huang; Zan Dong; Hong-Da Chen

Palabras clave: General Physics and Astronomy.

Pp. 018503

InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm

Yu-Hua Zuo; Quan Cao; Yun Zhang; Ling-Zi Zhang; Jian-Chuan Guo; Chun-Lai Xue; Bu-Wen Cheng; Qi-Ming Wang

Palabras clave: General Physics and Astronomy.

Pp. 018504

Extended triplet set C 343 of DNA sequences and its application to the p 53 gene

Yan-Yan Yan; Ping Zhu

Palabras clave: General Physics and Astronomy.

Pp. 018701