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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/20/1/017102

Electronic structures and thermodynamic stabilities of aluminum-based deuterides from first principles calculations

Xiao Qiu Ye; De-Li Luo; Ge Sang; Bing-Yun Ao

Palabras clave: General Physics and Astronomy.

Pp. 017102

doi: 10.1088/1674-1056/20/1/017103

First-principles study of metallic carbon nanotubes with boron/nitrogen co-doping

Ling-Na Chen; Song-Shan Ma; Fang-Ping OuYang; Jin Xiao; Hui Xu

Palabras clave: General Physics and Astronomy.

Pp. 017103

doi: 10.1088/1674-1056/20/1/017104

Transport properties of a ladder with two random dimer chains

Dong-Sheng Hu; Chen-Ping Zhu; Yong-Mei Zhang

Palabras clave: General Physics and Astronomy.

Pp. 017104

doi: 10.1088/1674-1056/20/1/017201

Monte Carlo study of single-barrier structure based on exclusion model full counting statistics

Hua Chen; Lei Du; Cheng-Li Qu; Liang He; Wen-Hao Chen; Peng Sun

Palabras clave: General Physics and Astronomy.

Pp. 017201

doi: 10.1088/1674-1056/20/1/017202

Detailed analysis of ultrathin fluorescent red dye interlayer for organic photovoltaic cells

Yue Zang; Jun-Sheng Yu; Na-Na Wang; Ya-Dong Jiang

Palabras clave: General Physics and Astronomy.

Pp. 017202

doi: 10.1088/1674-1056/20/1/017203

Development and characteristic analysis of a field-plated Al 2 O 3 /AlInN/GaN MOS—HEMT

Wei Mao; Cui Yang; Yao Hao; Jin-Cheng Zhang; Hong-Xia Liu; Zhi-Wei Bi; Sheng-Rui Xu; Jun-Shuai Xue; Xiao-Hua Ma; Chong Wang; Lin-An Yang; Jin-Feng Zhang; Xian-Wei Kuang

Palabras clave: General Physics and Astronomy.

Pp. 017203

doi: 10.1088/1674-1056/20/1/017204

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)

Yi-Xin Chen; Guang-Di Shen; Wei-Ling Guo; Chen Xu; Jian-Jun Li

Palabras clave: General Physics and Astronomy.

Pp. 017204

doi: 10.1088/1674-1056/20/1/017301

Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

Hong-Xia Liu; Jin Li; Bin Li; Lei Cao; Bo Yuan

Palabras clave: General Physics and Astronomy.

Pp. 017301

doi: 10.1088/1674-1056/20/1/017302

Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

Yu-Pin Luo; Li-Gan Tien; Chuen-Horng Tsai; Ming-Hsien Lee; Feng-Yin Li

Palabras clave: General Physics and Astronomy.

Pp. 017302

doi: 10.1088/1674-1056/20/1/017303

Electronic transport through a quantum ring coupled to ferromagnetic leads

Feng Chi; Lian-Liang Sun; Ling Huang; Jia Zhao

Palabras clave: General Physics and Astronomy.

Pp. 017303