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Palabras clave – provistas por la editorial

Logic-in-Memory (LiM); Von Neumann’s bottleneck; memory-wall; memristor; memristive logic; Non-Volatile Memory (NVM); Resistive RAM; in-memory computing; majority logic; adder; Boolean logic; parallel-prefix adder; floating-gate transistor; nonvolatile memory; continuous-time programming; floating-gate memory array; FPAA; reconfigurable; MRAM; TRNG; PUF; morphable security primitive; hardware security primitive; RRAM; resistive-switching; cross-point; memory; neuromorphic; pattern recognition; multilayer perceptron; BNN; logic-in-memory; SIMPLY; physical design; power grid; power-gating; SRPG; selective SRPG; floorplanning; place and route; resistive RAM (ReRAM); non-volatile memory (NVM); 1Transistor-1Resistor (1T–1R); processing-in-memory; silicon oxide; silicon nitride; SOI technology; resistive switching; electrical characteristics; laser treatment; thermal treatment; energy modeling; non-von neumann; instruction set; compilation; stencils; convolutions; sram; energy wall; memory wall; low-bandwidth TIA; equalizer; multi-stage main amplifier; amplitude response; group delay variation; graph coloring; cellular nonlinear networks; memristor oscillatory networks; locally-active memristors; control theory