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Palabras clave – provistas por la editorial

concentrator systems; GaInP/GaInAs/Ge; multi-junction; photovoltaics; solar cells; space; triple-junction; FeFET; ferroelectric; nonvolatile; semiconductor memory; SBT; nanoantennas; optics; optoelectronic devices; photovoltaic technology; rectennas; resistive memories; thermal model; heat equation; thermal conductivity; circuit simulation; compact modeling; resistive switching; nanodevices; power conversion efficiency; MXenes; electrodes; additives; HTL/ETL; design of experiments; GFET; graphene; high-frequency; RF devices; tolerance analysis; molybdenum oxides; green synthesis; biological chelator; additional capacity; anodes; lithium-ion batteries; carbon nanotube; junctionless; tunnel field effect transistors; chemical doping; electrostatic doping; NEGF simulation; band-to-band tunneling; switching performance; nanoscale; phosphorene; black phosphorus; nanoribbon; edge contact; contact resistance; quantum transport; NEGF; metallization; broadening; zigzag carbon nanotube; armchair-edge graphene nanoribbon; quantum simulation; sub-10 nm; phototransistors; photosensitivity; subthreshold swing; GaN HEMTs; scaling; electron mobility; scattering; polarization charge; 2D materials; rhenium; selenides; ReSe2; field-effect transistor; pressure; negative photoconductivity; n/a