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Palabras clave – provistas por la editorial

microbolometer; infrared sensor; complementary metal-oxide semiconductor (CMOS); high sensitivity; temperature sensor; microresonator; MEMS; clamped–clamped beam; thermal detector; Infrared detector; strained layer superlattice; InAs/InAsSb; absorption coefficient; barrier detector; high operating temperature; manganite; heterostructure; photodetector; heterostructures; split-off band; wavelength extension; device performance; ultrasound transducer; photoacoustic imaging; piezoelectric; micromachined; CMUT; PMUT; optical ultrasound detection; type-II superlattice; infrared detector; mid-wavelength infrared (MWIR); unipolar barrier; InAs/GaSb; T2SL; IR; TE-cooled; spectroscopy; RoHS; MCT; n/a