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Palabras clave – provistas por la editorial

retention characteristic; high-κ; nonvolatile charge-trapping memory; stack engineering; NOR flash memory; aluminum oxide; NAND flash memory; interference; Technology Computer Aided Design (TCAD) simulation; disturbance; program; non-volatile memory (NVM); 3D NAND Flash memories; random telegraph noise; Flash memory reliability; test platform; endurance; support vector machine; raw bit error; 3D NAND Flash; RBER; reliability; flash signal processing; randomization scheme; solid-state drives; 3D flash memory; performance cliff; tail latency; garbage collection; artificial neural network; error correction code; work function; effective work function; dipole; metal gate; high-k; SiO2; interfacial reaction; MHONOS; erase performance; 3D NAND flash memory; temperature; read disturb; n/a