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Solid-State Electronics

Resumen/Descripción – provisto por la editorial en inglés
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.

However, given the wide availability of industrial simulators (Atlas, MEDICI etc), device simulation papers should be coupled with experiment or novel analytical approaches. Also, materials growth and characterization papers should be relevant to a current or future device technology.

Types of contributions
Original research papers, letters (intended for high impact and high quality short papers)and invited review papers (please contact the editors prior to submission).SSE does not publish Notes and Brief communications.
Palabras clave – provistas por la editorial

No disponibles.

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde mar. 1960 / hasta dic. 2023 ScienceDirect

Información

Tipo de recurso:

revistas

ISSN impreso

0038-1101

ISSN electrónico

1879-2405

Editor responsable

Elsevier

País de edición

Reino Unido

Fecha de publicación

Cobertura temática

electronica

Ingeniería eléctrica, electrónica e informática

Tabla de contenidos

doi: 10.1016/0038-1101(64)90123-6

Electron current through metal-insulator-metal sandwiches

W. Tantraporn

Pp. 81-91

doi: 10.1016/s0038-1101(98)00097-5

Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide

Wei-Kai Shih; Everett X. Wang; Srinivas Jallepalli; Francisco Leon; Christine M. Maziar; Al F. Tasch

Palabras clave: Electrical and Electronic Engineering; Materials Chemistry; Electronic, Optical and Magnetic Materials; Condensed Matter Physics.

Pp. 997-1006