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Chinese Physics B
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.Palabras clave – provistas por la editorial
No disponibles.
Historia
Continúa: Chinese Physics
Disponibilidad
Institución detectada | Período | Navegá | Descargá | Solicitá |
---|---|---|---|---|
No detectada | desde ene. 2008 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
1674-1056
Editor responsable
Chinese Physical Society (CPS)
País de edición
China
Fecha de publicación
2008-
Cobertura temática
Tabla de contenidos
Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method
Guang-Chen Zhang; Shi-Wei Feng; Zhou Zhou; Jing-Wan Li; Chun-Sheng Guo
Palabras clave: General Physics and Astronomy.
Pp. 027202
Thermopower in parallel double quantum dots with Rashba spin—orbit interaction
Hui-Jie Xue; Tian-Quan Lü; Hong-Chen Zhang; Hai-Tao Yin; Lian Cui; Ze-Long He
Palabras clave: General Physics and Astronomy.
Pp. 027301
Electronic structures of stacked layers quantum dots: influence of the non-perfect alignment and the applied electric field
Bo-Yong Jia; Zhong-Yuan Yu; Yu-Min Liu; Li-Hong Han; Wen-Jie Yao; Hao Feng; Han Ye
Palabras clave: General Physics and Astronomy.
Pp. 027302
Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier
Xiao-Hua Ma; Hui-You Yu; Si Quan; Li-Yuan Yang; Cai-Yuan Pan; Ling Yang; Hao Wang; Jin-Cheng Zhang; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 027303
Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths
Xiao-Hua Ma; Cai-Yuan Pan; Li-Yuan Yang; Hui-You Yu; Ling Yang; Si Quan; Hao Wang; Jin-Cheng Zhang; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 027304
Erratum to “Quantum compact model for thin-body double-gate Schottky barrier MOSFETs"
Su-Zhen Luan; Hong-Xia Liu
Palabras clave: General Physics and Astronomy.
Pp. 027305
Negative capacitance in doped bi-layer organic light-emitting devices
Nuo Li; Xin-Dong Gao; Zuo-Ti Xie; Zheng-Yi Sun; Xun-Min Ding; Xiao-Yuan Hou
Palabras clave: General Physics and Astronomy.
Pp. 027306
A new model analysis of the third harmonic voltage in inductive measurement for critical current density of superconducting films
Xu Zhang; Zhi-Zhen Wu; Tie-Ge Zhou; Ming He; Xin-Jie Zhao; Shao-Lin Yan; Lan Fang
Palabras clave: General Physics and Astronomy.
Pp. 027401
Influence of oxygen pressure on critical current density and magnetic flux pinning structures in YBa 2 Cu 3 O
Fa-Zhu Ding; Hong-Wei Gu; Teng Zhang; Shao-Tao Dai; Li-Ye Xiao
Palabras clave: General Physics and Astronomy.
Pp. 027402
Magnetic entropy change and large refrigerant capacity of Ce 6 Ni 2 Si 3 -type GdCoSiGe compound
Jun Shen; Hu Zhang; Jian-Feng Wu
Palabras clave: General Physics and Astronomy.
Pp. 027501