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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

Guang-Chen Zhang; Shi-Wei Feng; Zhou Zhou; Jing-Wan Li; Chun-Sheng Guo

Palabras clave: General Physics and Astronomy.

Pp. 027202

Thermopower in parallel double quantum dots with Rashba spin—orbit interaction

Hui-Jie Xue; Tian-Quan Lü; Hong-Chen Zhang; Hai-Tao Yin; Lian Cui; Ze-Long He

Palabras clave: General Physics and Astronomy.

Pp. 027301

Electronic structures of stacked layers quantum dots: influence of the non-perfect alignment and the applied electric field

Bo-Yong Jia; Zhong-Yuan Yu; Yu-Min Liu; Li-Hong Han; Wen-Jie Yao; Hao Feng; Han Ye

Palabras clave: General Physics and Astronomy.

Pp. 027302

Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier

Xiao-Hua Ma; Hui-You Yu; Si Quan; Li-Yuan Yang; Cai-Yuan Pan; Ling Yang; Hao Wang; Jin-Cheng Zhang; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 027303

Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

Xiao-Hua Ma; Cai-Yuan Pan; Li-Yuan Yang; Hui-You Yu; Ling Yang; Si Quan; Hao Wang; Jin-Cheng Zhang; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 027304

Erratum to “Quantum compact model for thin-body double-gate Schottky barrier MOSFETs"

Su-Zhen Luan; Hong-Xia Liu

Palabras clave: General Physics and Astronomy.

Pp. 027305

Negative capacitance in doped bi-layer organic light-emitting devices

Nuo Li; Xin-Dong Gao; Zuo-Ti Xie; Zheng-Yi Sun; Xun-Min Ding; Xiao-Yuan Hou

Palabras clave: General Physics and Astronomy.

Pp. 027306

A new model analysis of the third harmonic voltage in inductive measurement for critical current density of superconducting films

Xu Zhang; Zhi-Zhen Wu; Tie-Ge Zhou; Ming He; Xin-Jie Zhao; Shao-Lin Yan; Lan Fang

Palabras clave: General Physics and Astronomy.

Pp. 027401

Influence of oxygen pressure on critical current density and magnetic flux pinning structures in YBa 2 Cu 3 O

Fa-Zhu Ding; Hong-Wei Gu; Teng Zhang; Shao-Tao Dai; Li-Ye Xiao

Palabras clave: General Physics and Astronomy.

Pp. 027402

Magnetic entropy change and large refrigerant capacity of Ce 6 Ni 2 Si 3 -type GdCoSiGe compound

Jun Shen; Hu Zhang; Jian-Feng Wu

Palabras clave: General Physics and Astronomy.

Pp. 027501