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PMN-PT thin films; preferred orientation; ferroelectric property; dielectric property; flexible; film capacitor; Ba0.5Sr0.5TiO3/0.4BiFeO3-0.6SrTiO3; energy storage properties; MOS capacitors; Sm2O3 high-k gate dielectric; atomic layer deposition; conduction mechanisms; interface state density; BSFM; phase transition; aging; electrical properties; BiOCl/NaNbO3; heterojunction; piezocatalysis; photocatalysis; degradation; humidity sensing; impedance-type sensors; organometallic halide perovskite; HZO; PEALD; ferroelectric memory; deposition temperature; film density; remanent polarization; fatigue endurance; CBTi-BFO; fine grain; electric breakdown strength; recoverable energy storage; spin waves; Dzyaloshinskii–Moriya interaction; ferromagnetism; spintronics; two-dimensional materials; ferroelectric properties; scanning probe microscope; negative piezoelectricity; phase segregation; multiferroic materials; anisotropy; DyFeO3; magnetoelectric coupling; pulsed high magnetic field; DM interaction; crystalline YFeO3; magnetic properties; enhanced weak ferromagnetism; exchange interactions