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Palabras clave – provistas por la editorial

antenna current; transmission line model; frequency-selective surface analytical approximation; low-temperature soldering; 3D IC; Bi aggregation; Sn-Bi solder; integrated circuit interconnects; aging; reliability; electromigration; physics-based modeling; average power handling capability (APHC); slow-wave transmission line (SWTL); thermal resistance; average heat-spreading width; temperature-dependent resistivity; broadside structure; far-end crosstalk; impedance; interposer channel; silicon interposer; vertical tabbed via; on-chip interconnect; carbon nanotube; through-silicon-via (TSV); Cu-CNT composite; Cu–Sn bonding; Au–Au bonding; graphene; high-temperature pressure sensor; substrate integrated waveguide (SIW); spoof surface plasmon polaritons (SSPPs); integrated passive device; through-dielectric capacitor (TDC); electromagnetic bandgap (EBG); interposers; low-loss substrates; noise suppression structures; packages; power delivery network (PDN); power/ground noise; Pt–Pt interconnection; high-temperature resistant packaging; metallic bonding; Au wire bonding; high-temperature annealing; focused ion beam (FIB); morphology analysis; wettability; hot-melt glass; flow time; coverage thickness; SiO2 and Au substrate; MEMS sensor; reliability evaluation; vacuum degradation; mathematical model; parylene; blood oxygen; sensing array; wearable device; on-chip spiral inductor; circuit model; kinetic inductance; quantum resistance; frequency selective rasorber (FSR); spoof surface plasmon polaritons (SSPP); frequency selective surface (FSS); broadband; dual active bridge; deadbeat controller; load feedforward; n/a