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Palabras clave – provistas por la editorial

AlN; AlScN; aluminum nitride; aluminum scandium nitride; micromirror; microscanner; piezoelectric; aluminium scandium nitride; piezoelectric thin films; MEMS; non-metallic substrates; scandium-doped aluminum nitride; ferroelectric; substrate-RF; residual stress; coercive field; leakage current; high temperature; nonvolatile memory; retention; fatigue; wurtzite; film; sputter deposition; scandium–aluminum nitride; Lamb-wave resonators; complementary switchable; SAW devices; piezoelectricity; ScAlN thin film; diamond thin film; 5G technology; electromechanical coupling coefficient k2; Q-factor; aluminum scandium nitride (AlScN); aluminum nitride (AlN); wet etch; potassium hydroxide (KOH); physical vapor deposition; stress; stress gradient; fabrication; cantilever beams; thermal stability; structure analysis; X-ray diffraction; ferroelectrics; thin film; PUND test; laser ultrasound; surface acoustic waves; magnetron sputter epitaxy; elastic properties; thin films; piezoelectric films; Raman spectroscopy; alloy scattering; temperature coefficient; n/a