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Synthesis, Properties and Applications of Germanium Chalcogenides

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Palabras clave – provistas por la editorial

PCM; Ge2Sb2Te5; sputtering; flexible substrates; crystallization; electrical properties; phase change materials; nitrogen; strain; kinetics; amorphous phase; germanium telluride; indium alloying; optical contrast; Ge-rich alloys; crystallization temperature; segregation; Ge-rich GST alloys; Raman; electronic properties; Ge-rich GST; pulsed laser deposition; phase separation; GGST; EDX elemental chemical mapping; embedded memory; density functional theory; MOCVD; VLS; phase-change memory; nanowires; core-shell; Ge–Sb–Te; Ge–Sb–Te/Sb2Te3; embedded electronic memories; Density Functional Theory; high-throughput calculations;