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Palabras clave – provistas por la editorial

physical vapor deposition; magnetron sputtering; AlN/Al coating; silicon substrate; residual stresses; wafer curvature method; nanoscale residual stress profiling; indentation failure modes; nanoindentation adhesion; intermetallic phases; growth kinetics; Al–Ni system; zinc oxide; nanoparticles; paper transistors; printed electronics; electrolyte-gated transistors; microwave synthesis; oxide dissociation; doping; rare earth ions; upconversion; liquid alloys; 2D materials; thin films; Ga–Sn–Zn alloys; gallium alloys; nanoanalysis; lithium-ion; nickel–manganese–cobalt oxide (NMC); leaching; recycling; recover; degradation; SEM-EDX; Raman spectroscopy; resistive switching memories; multi-level cell; copper oxide; grain boundaries; aluminum oxide; p-type TFT; p-type oxide semiconductors; SnO electrical properties; oxide structure analysis; ToF-SIMS 3D imaging; compositional depth profiling; high aspect ratio (HAR) structures; silicon doped hafnium oxide (HSO) ALD deposition; lateral high aspect ratio (LHAR); ToF-SIMS analysis; n/a