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Palabras clave – provistas por la editorial

random dopant; drift-diffusion; variability; device simulation; nanodevice; screening; Coulomb interaction; III-V; TASE; MOSFETs; Integration; nanowire field-effect transistors; silicon nanomaterials; charge transport; one-dimensional multi-subband scattering models; Kubo–Greenwood formalism; schrödinger-poisson solvers; DC and AC characteristic fluctuations; gate-all-around; nanowire; work function fluctuation; aspect ratio of channel cross-section; timing fluctuation; noise margin fluctuation; power fluctuation; CMOS circuit; statistical device simulation; variability effects; Monte Carlo; Schrödinger based quantum corrections; quantum modeling; nonequilibrium Green’s function; nanowire transistor; electron–phonon interaction; phonon–phonon interaction; self-consistent Born approximation; lowest order approximation; Padé approximants; Richardson extrapolation; ZnO; field effect transistor; conduction mechanism; metal gate; material properties; fabrication; modelling; nanojunction; constriction; quantum electron transport; quantum confinement; dimensionality reduction; stochastic Schrödinger equations; geometric correlations; silicon nanowires; nano-transistors; quantum transport; hot electrons; self-cooling; nano-cooling; thermoelectricity; heat equation; non-equilibrium Green functions; power dissipation