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Palabras clave – provistas por la editorial

high-power impulse magnetron sputtering (HiPIMS); silicon carbide; aluminum nitride; thin film; Rutherford backscattering spectrometry (RBS); grazing incidence X-ray diffraction (GIXRD); Raman spectroscopy; 6H-SiC; indentation; deformation; material removal mechanisms; critical load; 4H-SiC; critical depth of cut; Berkovich indenter; cleavage strength; nanoscratching; power electronics; high-temperature converters; MEMS devices; SiC power electronic devices; neural interface; neural probe; neural implant; microelectrode array; MEA; SiC; 3C-SiC; doped SiC; n-type; p-type; amorphous SiC; epitaxial growth; electrochemical characterization; MESFET; simulation; PAE; bulk micromachining; electrochemical etching; circular membrane; bulge test; vibrometry; mechanical properties; Young’s modulus; residual stress; FEM; semiconductor radiation detector; microstrip detector; power module; negative gate-source voltage spike; 4H-SiC, epitaxial layer; Schottky barrier; radiation detector; point defects; deep level transient spectroscopy (DLTS); thermally stimulated current spectroscopy (TSC); electron beam induced current spectroscopy (EBIC); pulse height spectroscopy (PHS); n/a