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Palabras clave – provistas por la editorial

graphene; polycrystalline silicon; photodiode; phototransistor; pixel; high dynamic range (HDR) image; Ni/4H-SiC Schottky barrier diodes (SBDs); C/Si ratios; 1/f noise; resonant cavity; photodetectors; near-infrared; silicon; p-Si/i-ZnO/n-AZO; avalanche photodiode (APD); impact ionization coefficients; GeSn alloys; silicon photonics; photonic integrated circuits; microbolometer; complementary metal oxide semiconductor (CMOS)-compatible; uncooled infrared detectors; thermal detectors; infrared focal plane array (IRFPA); read-out integrated circuit (ROIC); photodetector; semiconductor; microphotonics; group IV; colloidal systems; single-photon avalanche diode (SPAD); gating; avalanche transients; 3.3 V/0.35 µm complementary metal-oxide-semiconductor (CMOS); n/a