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Palabras clave – provistas por la editorial

GaN HEMT; self-heating effect; microwave power amplifier; thermal impedance; thermal time constant; thermal equivalent circuit; GaN; crystal growth; ammonothermal method; HVPE; ion implantation; gallium nitride; thermodynamics; ultra-high-pressure annealing; diffusion; diffusion coefficients; molecular beam epitaxy; nitrides; laser diode; tunnel junction; LTE; AlN; AlGaN/GaN; interface state density; conductance-frequency; MISHEMT; gallium nitride nanowires; polarity; Kelvin probe force microscopy; selective area growth; selective epitaxy; AlGaN/GaN heterostructures; edge effects; effective diffusion length; MOVPE; nanowires; AlGaN; LEDs; growth polarity; n/a