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Wide Bandgap Based Devices: Design, Fabrication and Applications

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Palabras clave – provistas por la editorial

GaN; high-electron-mobility transistor (HEMT); ultra-wide band gap; GaN-based vertical-cavity surface-emitting laser (VCSEL); composition-graded AlxGa1−xN electron blocking layer (EBL); electron leakage; GaN laser diode; distributed feedback (DFB); surface gratings; sidewall gratings; AlGaN/GaN; proton irradiation; time-dependent dielectric breakdown (TDDB); reliability; normally off; power cycle test; SiC micro-heater chip; direct bonded copper (DBC) substrate; Ag sinter paste; wide band-gap (WBG); thermal resistance; amorphous InGaZnO; thin-film transistor; nitrogen-doping; buried-channel; stability; 4H-SiC; turn-off loss; ON-state voltage; breakdown voltage (BV); IGBT; wide-bandgap semiconductor; high electron mobility transistors; vertical gate structure; normally-off operation; gallium nitride; asymmetric multiple quantum wells; barrier thickness; InGaN laser diodes; optical absorption loss; electron leakage current; wide band gap semiconductors; numerical simulation; terahertz Gunn diode; grooved-anode diode; Gallium nitride (GaN) high-electron-mobility transistors (HEMTs); vertical breakdown voltage; buffer trapping effect; gallium nitride (GaN); power switching device; active power filter (APF); power quality (PQ); metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT); recessed gate; double barrier; high-electron-mobility transistors; copper metallization; millimeter wave; wide bandgap semiconductors; flexible devices; silver nanoring; silver nanowire; polyol method; cosolvent; tungsten trioxide film; spin coating; optical band gap; morphology; electrochromism; self-align; hierarchical nanostructures; ZnO nanorod/NiO nanosheet; photon extraction efficiency; photonic emitter; wideband; HEMT; power amplifier; jammer system; GaN 5G; high electron mobility transistors (HEMT); new radio; RF front-end; AESA radars; transmittance; distortions; optimization; GaN-on-GaN; schottky barrier diodes; high-energy α-particle detection; low voltage; thick depletion width detectors; n/a

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Información

Tipo de recurso:

libros

ISBN electrónico

978-3-0365-0567-1

País de edición

Suiza