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Palabras clave – provistas por la editorial

α-MoO3; carbon nitride; g-C3N4; molybdenum trioxide; nanoplates; synthesis; few-layer MoS2; magnetron sputtering; magnetron sputtering power; raman spectroscopy; disorder; V2Se9; atomic crystal; mechanical exfoliation; scanning Kelvin probe microscopy; MoS2; black phosphorus; 2D/2D heterojunction; junction FET; tunneling diode; tunneling FET; band-to-band tunneling (BTBT); natural molybdenite; MoS2 nanosheet; SiO2; liquid exfoliation; photoelectric properties; uniaxial strain; flexible substrate; film–substrate interaction; photoluminescence; Raman spectroscopy; molybdenum disulfide; bilayer-stacked structure; WS2; lubricant additives; tribological properties; interfacial layer; contact resistance; bias stress stability; saturable absorbers; Langmuir–Blodgett technique; Q-switched laser; chemical vapor deposition; P2O5; p-type conduction; P-doped MoS2; transition metal dichalcogenides; two-dimensional materials; ferroelectrics; 2D heterostructure; WSe2; NbSe2; Nb2O5 interlayer; synapse device; neuromorphic system; n/a