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Palabras clave – provistas por la editorial

Liquid phase deposition method; InGaN/GaN light-emitting diode; silver nanoparticle; zinc oxide; localized surface plasmon; β-Ga2O3; III-Nitrides; monoclinic; hexagonal arrangement; high-power; current distribution; vertical structure LED; blue organic light emitting diodes; transport materials; host-dopant; nanoparticles; luminescence; non-stoichiometric ZnxAgyInS1.5+x+0.5y nanocrystals; photoluminescence properties; tunable fluorescence emission; one-pot approach; perovskite light-emitting diodes; three-step spin coating; hole transport layer; PEDOT:PSS/MoO3-ammonia composite; μLED displays; μLEDs; GaN nanowires; core-shell structure; ultraviolet (UV) emitter; surface plasmon; Pt nanoparticles; hole-pattern; photon emission efficiency; distributed Bragg reflectors; gratings; GaN-based lasers; linewidth; epsilon-near-zero; wideband absorber; plasmon mode; Brewster mode; visible light communication; photonic crystals; flip-chip LED; Purcell effect; light extraction efficiency; nanostructured materials; surface/interface properties; nanostructured light-emitting devices; physical mechanism; surface/interface modification; surface/interface control; micro-scale light emitting diode; sapphire substrate; encapsulation; compound semiconductor; nanostructure; ultraviolet; light-emitting diode (LED); molecular beam epitaxy; GaN; AlN; photonic nanojet; photonic nanojet array; self-assembly; template-assisted self-assembly; patterning efficiency; III-nitride thin film; nanostructures; ultraviolet emitters; surface passivation; luminescence intensity; n/a