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Palabras clave – provistas por la editorial

fill factor loss analysis; double-diode model; PERC; temperature dependence; recombination current density; parasitic resistance; carrier selective contact; rear emitter heterojunction; passivation; crystallinity; thermal annealing; excimer laser annealing; amorphous hydrogenated silicon film; metallization; contact formation; Ag/Al paste; p+ emitter; N-type bifacial solar cells; silicon tandem heterojunction solar cell; N-doped Cu2O absorber layer; Al:ZnO (AZO); numerical electro-optical modeling; scanning electron microscopy (SEM); atomic force microscopy (AFM); X-ray diffraction (XRD); spectroscopic ellipsometry (SE); Fourier-transform infrared (FTIR) spectroscopy; degradation degree; failure rate; selective emitter; surface morphology; doping process; solar cell