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ohmic contact; n/a; MESFET; optical band gap; wide-bandgap semiconductor; annealing temperature; junction termination extension (JTE); channel length modulation; silicon carbide (SiC); amorphous InGaZnO (a-IGZO); light output power; GaN; electrochromism; large signal performance; passivation layer; 4H-SiC; positive gate bias stress (PGBS); asymmetric power combining; ultrahigh upper gate height; high electron mobility transistors; space application; gallium nitride (GaN); phase balance; edge termination; distributed Bragg reflector; cathode field plate (CFP); ammonothermal GaN; anode field plate (AFP); W band; GaN high electron mobility transistor (HEMT); 1T DRAM; growth of GaN; tungsten trioxide film; thin-film transistor (TFT); micron-sized patterned sapphire substrate; power added efficiency; T-anode; analytical model; AlGaN/GaN; harsh environment; high-temperature operation; amplitude balance; buffer layer; characteristic length; Ku-band; DIBL effect; I–V kink effect; flip-chip light-emitting diodes; high electron mobility transistors (HEMTs); power amplifier; sidewall GaN; external quantum efficiency; breakdown voltage (BV); threshold voltage (Vth) stability; regrown contact; AlGaN/GaN HEMT; TCAD; high electron mobility transistor (HEMT)