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Palabras clave – provistas por la editorial

single event effects; n/a; radiation-hardening-by-design (RHBD); frequency divider by two; single event upset; Image processing; CMOS analog integrated circuits; FPGA; total ionizing dose (TID); Impulse Sensitive Function; soft error; hardening by design; radiation hardening by design; X-rays; Single-Event Upsets (SEUs); line buffer; heavy ions; VHDL; FPGA-based digital controller; radiation hardening by design (RHBD); radiation hardening; SRAM-based FPGA; proton irradiation; ring oscillator; sensor readout IC; fault tolerance; space application; physical unclonable function; voltage controlled oscillator (VCO); Ring Oscillators; analog single-event transient (ASET); single event opset (SEU); SEB; single event upsets; bipolar transistor; total ionizing dose; protons; triple modular redundancy (TMR); gain degradation; space electronics; saturation effect; configuration memory; Co-60 gamma radiation; total ionization dose (TID); frequency synthesizers; CMOS; PLL; TDC; single-event upsets (SEUs); bandgap voltage reference (BGR); 4MR; single-shot; error rates; Radiation Hardening by Design; soft errors; heavy-ions; single-event effects (SEE); single event transient (SET); SEE testing; proton irradiation effects; RFIC; single event upset (SEU); FMR; ionization; radiation tolerant; triplex–duplex; neutron irradiation effects; digital integrated circuits; single event gate rupture (SEGR); power MOSFETs; ring-oscillator; selective hardening; voltage reference; nuclear fusion; TMR; gamma-rays; gamma ray; instrumentation amplifier; radiation effects; reference circuits; radiation-hardened