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energy storage system; power conditioning system; silicon carbide; vanadium redox flow batteries; AlGaN/GaN; SiC; high electron mobility transistor; Schottky barrier diode; breakdown field; noise; charge traps; radio frequency; wide-bandgap (WBG); gallium nitride (GaN); silicon carbide (SiC); high electron mobility transistor (HEMT); metal-oxide-semiconductor field effect transistor (MOSFET); driving technology; nickel oxide; annealing temperature; crystallite size; optical band gap; electrochromic device; indium oxide thin film; solution method; plasma surface treatment; bias stability; aluminum nitride; Schottky barrier diodes; radio frequency sputtering; X-ray diffraction; X-ray photoelectron spectroscopy; piezoelectric micromachined ultrasonic transducers; ranging; time of flight (TOF); time to digital converter circuit (TDC); AlGaN/GaN heterojunction; p-GaN gate; unidirectional operation; rectifying electrode; first-principles; density functional theory; pure β-Ga2O3; Sr-doped β-Ga2O3; p-type doping; band structure; density of states; optical absorption; AlN buffer layer; NH3 growth interruption; strain relaxation; GaN-based LED; low defect density; gate bias modulation; palladium catalyst; gallium nitride; nitrogen dioxide gas sensor; laser micromachining; sapphire; AlGaN/GaN heterostructures; high-electron mobility devices; p-GaN gate HEMT; normally off; low-resistance SiC substrate; temperature; high electron-mobility transistor (HEMT); equivalent-circuit modeling; microwave frequency; scattering-parameter measurements; GaN; MIS-HEMTs; fabrication; threshold voltage stability; supercritical technology; GaN power HEMTs; breakdown voltage; current collapse; compensation ratio; auto-compensation; carbon doping; HVPE; AlN; high-temperature; buffer layer; nitridation; high-electron mobility transistor; heterogeneous integration; SOI; QST; crystal growth; cubic and hexagonal structure; blue and yellow luminescence; electron lifetime; wafer dicing; stealth dicing; laser thermal separation; dry processing; laser processing; wide bandgap semiconductor; photovoltaic module; digital signal processor; synchronous buck converter; polar; semi-polar; non-polar; magnetron sputtering; HTA; GaN-HEMT mesa structures; 2DEG; X-ray sensor; X-ray imaging; n/a