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Palabras clave – provistas por la editorial

plasma electrolytic oxidation; electrical characteristic; anodizing; SEM; aluminum; low-temperature fabrication; ions adsorption; IGZO TFTs; device performance; oxidation; wide-bandgap semiconductor; α-Ga2O3; mist chemical vapor deposition (mist-CVD); carrier gas; transparent semiconductor; cellulose; tribological performance; stability; MAO (micro-arc oxidation) coating; self-lubricating; gadolinium cobaltites; atomic layer deposition; β-diketonates; ozone; preferential crystal growth orientation; high-aspect-ratio substrate; metal oxide thin films; ALD; crystallography; epitaxy; NiTiO3; tin oxide; thin films; atmospheric pressure chemical vapour deposition transport properties; magnetoresistance; impedance spectroscopy; charge carrier mobility; dynamic hot-probe measurements; indium-tin oxide; aluminum-zinc oxide; magnetron co-sputtering; bismuth ferrite; La-doping; piezoelectricity; sol–gel; n/a