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Palabras clave – provistas por la editorial

vertical GaN; quasi-vertical GaN; reliability; trapping; degradation; MOS; trench MOS; threshold voltage; nanomanufacturing; high-throughput method; material printing; flexible bioelectronics; nanomembrane; hybrid integration; GaAs; InGaAs channel; epitaxial lift-off; HEMT; van der Waals; 3C-SiC; stacking faults; doping; KOH etching; silicon carbide; radiation hardness; proton and electron irradiation; charge removal rate; compensation; irradiation temperature; heteroepitaxy; bulk growth; compliant substrates; defects; stress; cubic silicon carbide; power electronics; thin film; iron-based superconductor; pulsed laser deposition; transmission electron microscopy; diamond; MPCVD growth; electron microscopy; chemical vapour deposition; 2D materials; MoS2; silica point defects; optical fibers; radiation effects; 4H-SiC; ohmic contact; SIMS; Ti3SiC2; simulation; Schottky barrier; Schottky diodes; electrical characterization; graphene absorption; Fabry–Perot filter; radio frequency sputtering; CVD graphene; GaN; thermal management; GaN-on-diamond; CVD; arrhythmia detection; cardiovascular monitoring; soft biosensors; wearable sensors; flexible electronics; gate dielectric; aluminum oxide; interface; traps; instability; insulators; binary oxides; high-κ dielectrics; wide band gap semiconductors; energy electronics; ultra-wide bandgap; diodes; transistors; gallium oxide; Ga2O3; spinel; ZnGa2O4