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Chinese Physics Letters

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics Letters, published by the Chinese Physical Society, is charged with providing rapid publication of short reports and important research in all fields of physics. The journal provides its diverse readership with coverage of major advances in all aspects of physics, including the newest and most important achievements of physicists in China as well as other parts of the world.
Palabras clave – provistas por la editorial

No disponibles.

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ago. 1984 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

0256-307X

ISSN electrónico

1741-3540

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

Determination of the Minimum Wave Speed for the Modelling of Ventilated Cavitation

Ting Chen; Yu-Ning Zhang; Xiao-Ze Du

Palabras clave: General Physics and Astronomy.

Pp. 116401

Imaging Ultrafast Plasmon Dynamics within a Complex Dolmen Nanostructure Using Photoemission Electron Microscopy

Jiang Qin; Peng Lang; Bo-Yu Ji; N. K. Alemayehu; Han-Yan Tao; Xun Gao; Zuo-Qiang Hao; Jing-Quan Lin

Palabras clave: General Physics and Astronomy.

Pp. 116801

Photon-Assisted Heat Generation by Electric Current in a Quantum Dot Attached to Ferromagnetic Leads

Feng Chi; Lian-Liang Sun

Palabras clave: General Physics and Astronomy.

Pp. 117201

The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes

Feng Dai; Xue-Feng Zheng; Pei-Xian Li; Xiao-Hui Hou; Ying-Zhe Wang; Yan-Rong Cao; Xiao-Hua Ma; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 117301

Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes

Ning Zhang; Xue-Cheng Wei; Kun-Yi Lu; Liang-Sen Feng; Jie Yang; Bin Xue; Zhe Liu; Jin-Min Li; Jun-Xi Wang

Palabras clave: General Physics and Astronomy.

Pp. 117302

Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer: Material Growth and Device Fabrication

Jia-Min Gong; Quan Wang; Jun-Da Yan; Feng-Qi Liu; Chun Feng; Xiao-Liang Wang; Zhan-Guo Wang

Palabras clave: General Physics and Astronomy.

Pp. 117303

Remanence Enhancement Effect in Ni 0.7 Zn 0.3 Fe 2 O 4

Cheng-Hua Fan; Qun-Jing Wang; Zhen-Fa Zi

Palabras clave: General Physics and Astronomy.

Pp. 117304

Integer Quantum Hall Effect in a Two-Orbital Square Lattice with Chern Number C = 2

Hua-Ling Yu; Zhang-Yin Zhai; Xin-Tian Bian

Palabras clave: General Physics and Astronomy.

Pp. 117305

Enhancement of Resonant Activation by Constant Bias Current for Superconducting Junction

Jing-Hui Li

Palabras clave: General Physics and Astronomy.

Pp. 117401

Effects of Contents of Multiwall Carbon Nanotubes in Polyaniline Films on Optical and Electrical Properties of Polyaniline

N. Bafandeh; M. M. Larijani; A. Shafiekhani; M. R. Hantehzadeh; N. Sheikh

Palabras clave: General Physics and Astronomy.

Pp. 117801