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Chinese Physics Letters
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics Letters, published by the Chinese Physical Society, is charged with providing rapid publication of short reports and important research in all fields of physics. The journal provides its diverse readership with coverage of major advances in all aspects of physics, including the newest and most important achievements of physicists in China as well as other parts of the world.Palabras clave – provistas por la editorial
No disponibles.
Disponibilidad
Institución detectada | Período | Navegá | Descargá | Solicitá |
---|---|---|---|---|
No detectada | desde ago. 1984 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
0256-307X
ISSN electrónico
1741-3540
País de edición
China
Fecha de publicación
1984-
Cobertura temática
Tabla de contenidos
Determination of the Minimum Wave Speed for the Modelling of Ventilated Cavitation
Ting Chen; Yu-Ning Zhang; Xiao-Ze Du
Palabras clave: General Physics and Astronomy.
Pp. 116401
Imaging Ultrafast Plasmon Dynamics within a Complex Dolmen Nanostructure Using Photoemission Electron Microscopy
Jiang Qin; Peng Lang; Bo-Yu Ji; N. K. Alemayehu; Han-Yan Tao; Xun Gao; Zuo-Qiang Hao; Jing-Quan Lin
Palabras clave: General Physics and Astronomy.
Pp. 116801
Photon-Assisted Heat Generation by Electric Current in a Quantum Dot Attached to Ferromagnetic Leads
Feng Chi; Lian-Liang Sun
Palabras clave: General Physics and Astronomy.
Pp. 117201
The Transport Mechanisms of Reverse Leakage Current in Ultraviolet Light-Emitting Diodes
Feng Dai; Xue-Feng Zheng; Pei-Xian Li; Xiao-Hui Hou; Ying-Zhe Wang; Yan-Rong Cao; Xiao-Hua Ma; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 117301
Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes
Ning Zhang; Xue-Cheng Wei; Kun-Yi Lu; Liang-Sen Feng; Jie Yang; Bin Xue; Zhe Liu; Jin-Min Li; Jun-Xi Wang
Palabras clave: General Physics and Astronomy.
Pp. 117302
Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer: Material Growth and Device Fabrication
Jia-Min Gong; Quan Wang; Jun-Da Yan; Feng-Qi Liu; Chun Feng; Xiao-Liang Wang; Zhan-Guo Wang
Palabras clave: General Physics and Astronomy.
Pp. 117303
Remanence Enhancement Effect in Ni 0.7 Zn 0.3 Fe 2 O 4
Cheng-Hua Fan; Qun-Jing Wang; Zhen-Fa Zi
Palabras clave: General Physics and Astronomy.
Pp. 117304
Integer Quantum Hall Effect in a Two-Orbital Square Lattice with Chern Number C = 2
Hua-Ling Yu; Zhang-Yin Zhai; Xin-Tian Bian
Palabras clave: General Physics and Astronomy.
Pp. 117305
Enhancement of Resonant Activation by Constant Bias Current for Superconducting Junction
Jing-Hui Li
Palabras clave: General Physics and Astronomy.
Pp. 117401
Effects of Contents of Multiwall Carbon Nanotubes in Polyaniline Films on Optical and Electrical Properties of Polyaniline
N. Bafandeh; M. M. Larijani; A. Shafiekhani; M. R. Hantehzadeh; N. Sheikh
Palabras clave: General Physics and Astronomy.
Pp. 117801