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Chinese Physics Letters

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics Letters, published by the Chinese Physical Society, is charged with providing rapid publication of short reports and important research in all fields of physics. The journal provides its diverse readership with coverage of major advances in all aspects of physics, including the newest and most important achievements of physicists in China as well as other parts of the world.
Palabras clave – provistas por la editorial

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Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ago. 1984 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

0256-307X

ISSN electrónico

1741-3540

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/0256-307x/33/6/067201

Surface Leakage Currents in SiN and Al 2 O 3 Passivated AlGaN/GaN High Electron Mobility Transistors

Long Bai; Wei Yan; Zhao-Feng Li; Xiang Yang; Bo-Wen Zhang; Li-Xin Tian; Feng Zhang; Grzegorz Cywinski; Krzesimir Szkudlarek; Czesław Skierbiszewski; Wojciech Knap; Fu-Hua Yang

Palabras clave: General Physics and Astronomy.

Pp. 067201

doi: 10.1088/0256-307x/33/6/067202

Bipolar Resistive Switching in Epitaxial Mn 3 O 4 Thin Films on Nb-Doped SrTiO 3 Substrates

Xu-Bo Lai; Yu-Hang Wang; Xiao-Lan Shi; Dong-Yong Li; Bo-Yang Liu; Rong-Ming Wang; Liu-Wan Zhang

Palabras clave: General Physics and Astronomy.

Pp. 067202

doi: 10.1088/0256-307x/33/6/067203

Gate-Voltage-Induced Magnetization Reversal and Tunneling Anisotropic Magnetoresistance in a Single Molecular Magnet with Temperature Gradient

Shu-Jing Li; Yu-Ying Zhang; Wei-Ping Xu; Yi-Hang Nie

Palabras clave: General Physics and Astronomy.

Pp. 067203

doi: 10.1088/0256-307x/33/6/067301

Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers

Jun Luo; Sheng-Lei Zhao; Zhi-Yu Lin; Jin-Cheng Zhang; Xiao-Hua Ma; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 067301

doi: 10.1088/0256-307x/33/6/067401

Tip-Pressure-Induced Incoherent Energy Gap in CaFe 2 As 2

Jia-Xin Yin; Ji-Hui Wang; Zheng Wu; Ang Li; Xue-Jin Liang; Han-Qing Mao; Gen-Fu Chen; Bing Lv; Ching-Wu Chu; Hong Ding; Shu-Heng Pan

Palabras clave: General Physics and Astronomy.

Pp. 067401

doi: 10.1088/0256-307x/33/6/067402

Superconductivity in Undoped CaFe 2 As 2 Single Crystals

Dong-Yun Chen; Jia Yu; Bin-Bin Ruan; Qi Guo; Lei Zhang; Qing-Ge Mu; Xiao-Chuan Wang; Bo-Jin Pan; Gen-Fu Chen; Zhi-An Ren

Palabras clave: General Physics and Astronomy.

Pp. 067402

doi: 10.1088/0256-307x/33/6/067403

A Reproducible Approach of Preparing High-Quality Overdoped Bi 2 Sr 2 CaCu 2 O
Yu-Xiao Zhang; Lin Zhao; Gen-Da Gu; Xing-Jiang Zhou

Palabras clave: General Physics and Astronomy.

Pp. 067403

doi: 10.1088/0256-307x/33/6/067501

Pressure Tuning of Magnetism and Drastic Increment of Thermal Conductivity under Applied Magnetic Field in HgCr 2 S 4

Chuan-Chuan Gu; Xu-Liang Chen; Chen Shen; Lang-Sheng Ling; Li Pi; Zhao-Rong Yang; Yu-Heng Zhang

Palabras clave: General Physics and Astronomy.

Pp. 067501

doi: 10.1088/0256-307x/33/6/067502

The Electric-Field Controllable Non-Volatile 35° Rotation of Magnetic Easy Axis in Magnetoelectric CoFeB/(001)-Cut Pb(Mg 1/3 Nb 2/3 )O

Hao He; Jiang-Tao Zhao; Zhen-Lin Luo; Yuan-Jun Yang; Han Xu; Bin Hong; Liang-Xin Wang; Rui-Xue Wang; Chen Gao

Palabras clave: General Physics and Astronomy.

Pp. 067502

doi: 10.1088/0256-307x/33/6/068101

Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition

Peng Ren; Gang Han; Bing-Lei Fu; Bin Xue; Ning Zhang; Zhe Liu; Li-Xia Zhao; Jun-Xi Wang; Jin-Min Li

Palabras clave: General Physics and Astronomy.

Pp. 068101