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Chinese Physics Letters
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics Letters, published by the Chinese Physical Society, is charged with providing rapid publication of short reports and important research in all fields of physics. The journal provides its diverse readership with coverage of major advances in all aspects of physics, including the newest and most important achievements of physicists in China as well as other parts of the world.Palabras clave – provistas por la editorial
No disponibles.
Disponibilidad
| Institución detectada | Período | Navegá | Descargá | Solicitá |
|---|---|---|---|---|
| No detectada | desde ago. 1984 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
0256-307X
ISSN electrónico
1741-3540
País de edición
China
Fecha de publicación
1984-
Cobertura temática
Tabla de contenidos
Memory Behaviors Based on ITO/Graphene Oxide/Al Structure
Ming-Dong Yi; Jia-Lin Guo; Bo Hu; Xian-Hai Xia; Qu-Li Fan; Ling-Hai Xie; Wei Huang
Palabras clave: General Physics and Astronomy.
Pp. 077201
Polymer Solar Cells Using a PEDOT:PSS/Cu Nanowires/PEDOT:PSS Multilayer as the Anode Interlayer
Ruo-Chuan Zhang; Meng-Ying Wang; Li-Ying Yang; Wen-Jing Qin; Shou-Gen Yin
Palabras clave: General Physics and Astronomy.
Pp. 077202
31 P Nuclear Magnetic Resonance of Charge-Density-Wave Transition in a Single Crystal of RuP
Guo-Zhi Fan; Rong-Yan Chen; Nan-Lin Wang; Jian-Lin Luo
Palabras clave: General Physics and Astronomy.
Pp. 077203
Effects of Nonparabolicity on Electron Thermopower of Size-Quantized Semiconductor Films
Guliyev Bahsheli; Barati Chiyaneh Akbar; Bashirov Novruz; Kerimli Genber
Palabras clave: General Physics and Astronomy.
Pp. 077204
AlGaN Channel High Electron Mobility Transistors with an Al x Ga 1−x N/GaN Composite Buffer Layer
Xiang-Dong Li; Jin-Cheng Zhang; Yu Zou; Xue-Zhi Ma; Chang Liu; Wei-Hang Zhang; Hui-Juan Wen; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 077205
Improvement of Performance of Organic Light-Emitting Diodes with Both a MoO 3 Hole Injection Layer and a MoO 3 Doped Hole Transport Layer
Wei Liu; Guo-Hong Liu; Yong Liu; Bao-Jun Li; Xiang Zhou
Palabras clave: General Physics and Astronomy.
Pp. 077206
Shot Noise Suppression in a Quantum Point Contact with Short Channel Length
Heejun Jeong
Palabras clave: General Physics and Astronomy.
Pp. 077301
Characterization of Ge Doping on Sb 2 Te 3 for High-Speed Phase Change Memory Application
Yue-Qin Zhu; Zhong-Hua Zhang; San-Nian Song; Hua-Qing Xie; Zhi-Tang Song; Lan-Lan Shen; Le Li; Liang-Cai Wu; Bo Liu
Palabras clave: General Physics and Astronomy.
Pp. 077302
The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs
Xiao-Ming Huang; Chen-Fei Wu; Hai Lu; Fang-Fang Ren; Hong-Bo Zhu; Yong-Jin Wang
Palabras clave: General Physics and Astronomy.
Pp. 077303
Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz
Bin Niu; Yuan Wang; Wei Cheng; Zi-Li Xie; Hai-Yan Lu; Long Chang; Jun-Ling Xie
Palabras clave: General Physics and Astronomy.
Pp. 077304