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Chinese Physics Letters

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics Letters, published by the Chinese Physical Society, is charged with providing rapid publication of short reports and important research in all fields of physics. The journal provides its diverse readership with coverage of major advances in all aspects of physics, including the newest and most important achievements of physicists in China as well as other parts of the world.
Palabras clave – provistas por la editorial

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Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ago. 1984 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

0256-307X

ISSN electrónico

1741-3540

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/0256-307x/31/12/127801

Detecting Cells with the Scatter Plot Pattern of an Orthogonal Scattering Mueller Matrix

Qing-Hua Wang; Zhen-Hua Li; Jian-Cheng Lai; An-Zhi He

Palabras clave: General Physics and Astronomy.

Pp. 127801

doi: 10.1088/0256-307x/31/12/127802

Ultrafast Imaging of Electronic Relaxation in Ortho-xylene: New Features from Fragmentation-Ion Spectroscopy

Yu-Zhu Liu; Shao-Rong Xiao; Knopp Gregor; Gerber Thomas

Palabras clave: General Physics and Astronomy.

Pp. 127802

doi: 10.1088/0256-307x/31/12/127901

Current Density-Dependent Thermal Stability of ZnSe Nanowire in M-S-M Nanostructure

Yu Tan; Yan-Guo Wang

Palabras clave: General Physics and Astronomy.

Pp. 127901

doi: 10.1088/0256-307x/31/12/128101

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

Xu-Liang Zhou; Jiao-Qing Pan; Hong-Yan Yu; Shi-Yan Li; Bao-Jun Wang; Jing Bian; Wei Wang

Palabras clave: General Physics and Astronomy.

Pp. 128101

doi: 10.1088/0256-307x/31/12/128102

Growth of Atomically Flat Ultra-Thin Ag Films on Si(111) by Introducing a √3 × √3-Ga Buffer Layer

Jie-Hui He; Li-Qun Jiang; Jing-Lan Qiu; Lan Chen; Ke-Hui Wu

Palabras clave: General Physics and Astronomy.

Pp. 128102

doi: 10.1088/0256-307x/31/12/128103

Synthesis and Optical Properties of InP Semiconductor Nanocombs

Yan-Long Yu; Yi-Song Zhao; Fa-Ming Gao

Palabras clave: General Physics and Astronomy.

Pp. 128103

doi: 10.1088/0256-307x/31/12/128501

Effects of Annealing on Schottky Characteristics in AlGaN/GaN HEMT with Transparent Gate Electrode

Chong Wang; Kun Zhang; Yun-Long He; Xue-Feng Zheng; Xiao-Hua Ma; Jin-Cheng Zhang; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 128501

doi: 10.1088/0256-307x/31/12/128502

A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate MOSFETs

Visweswara Rao Samoju; Satyabrata Jit; Pramod Kumar Tiwari

Palabras clave: General Physics and Astronomy.

Pp. 128502

doi: 10.1088/0256-307x/31/12/129701

Energy Extraction from a Black Hole and Its Influence on X-Ray Spectra

Chang-Yin Huang; Xiao-Long Gong; Ding-Xiong Wang

Palabras clave: General Physics and Astronomy.

Pp. 129701

doi: 10.1088/0256-307x/32/1/010301

Determining Separability with Entanglement of Formation and Entanglement Sudden Death

Xiao-Yu Chen

Palabras clave: General Physics and Astronomy.

Pp. 010301