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Chinese Physics Letters

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics Letters, published by the Chinese Physical Society, is charged with providing rapid publication of short reports and important research in all fields of physics. The journal provides its diverse readership with coverage of major advances in all aspects of physics, including the newest and most important achievements of physicists in China as well as other parts of the world.
Palabras clave – provistas por la editorial

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Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ago. 1984 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

0256-307X

ISSN electrónico

1741-3540

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/0256-307x/30/12/126502

A Negative Thermal Expansion Material of ZrMgMo3O12

Wen-Bo Song; Er-Jun Liang; Xian-Sheng Liu; Zhi-Yuan Li; Bao-He Yuan; Jun-Qiao Wang

Palabras clave: General Physics and Astronomy.

Pp. 126502

doi: 10.1088/0256-307x/30/12/126801

The Propulsion of a Miniature Device by Organic Fluid Jetflow through Polymer Submicron Tubes

Yong-Xin Wang; Yang Chen; Shuai-Xia Tan; Yan-Fang Li; Ning Zhao; Jian Xu; Li-Na Zhang

Palabras clave: General Physics and Astronomy.

Pp. 126801

doi: 10.1088/0256-307x/30/12/127101

Optoelectronic Properties of Pure and Co Doped Indium Oxide by Hubbard and modified Becke–Johnson Exchange Potentials

H. A. Rahnamaye Aliabad; M. Bazrafshan; H. Vaezi; Masood Yousaf; Junaid Munir; M. A. Saeed

Palabras clave: General Physics and Astronomy.

Pp. 127101

doi: 10.1088/0256-307x/30/12/127102

A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Transistor with T-Dual Dielectric Buried Layers

Li-Juan Wu; Wen-Tong Zhang; Bo Zhang; Zhao-Ji Li

Palabras clave: General Physics and Astronomy.

Pp. 127102

doi: 10.1088/0256-307x/30/12/127103

Upconversion Emission Properties of Erbium- and Ytterbium-Doped Potassium Lithium Tantalate Niobate Ceramics

Lei Li; Zhong-Xiang Zhou; Wen-Long Yang; Huan Li; Ye Wu

Palabras clave: General Physics and Astronomy.

Pp. 127103

doi: 10.1088/0256-307x/30/12/127104

First Principles Study on Elastic Constants, Ferromagnetism and Electronic Structures of Alloyed Fe 3 Si Doped with Mo, Ti or Nb

Rui Ma; Quan Xie; Jin Huang; Xiao-Tian Guo; Wan-Jun Yan

Palabras clave: General Physics and Astronomy.

Pp. 127104

doi: 10.1088/0256-307x/30/12/127201

AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coefficient

Wei Ha; Jin-Cheng Zhang; Sheng-Lei Zhao; Sha-Sha Ge; Hui-Juan Wen; Chun-Fu Zhang; Xiao-Hua Ma; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 127201

doi: 10.1088/0256-307x/30/12/127301

High-Performance InTiZnO Thin-Film Transistors Deposited by Magnetron Sputtering

Ao Liu; Guo-Xia Liu; Fu-Kai Shan; Hui-Hui Zhu; B. C. Shin; W. J. Lee; C. R. Cho

Palabras clave: General Physics and Astronomy.

Pp. 127301

doi: 10.1088/0256-307x/30/12/127302

Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors

Qian Feng; Kai Du; Yu-Kun Li; Peng Shi; Qing Feng

Palabras clave: General Physics and Astronomy.

Pp. 127302

doi: 10.1088/0256-307x/30/12/127401

Electronic and Optical Properties of Spinel GeMg 2 O 4 and GeCd 2 O 4

A. Manzar; G. Murtaza; R. Khenata; S. Muhammad; Hayatullah

Palabras clave: General Physics and Astronomy.

Pp. 127401