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Chinese Physics Letters

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics Letters, published by the Chinese Physical Society, is charged with providing rapid publication of short reports and important research in all fields of physics. The journal provides its diverse readership with coverage of major advances in all aspects of physics, including the newest and most important achievements of physicists in China as well as other parts of the world.
Palabras clave – provistas por la editorial

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Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ago. 1984 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

0256-307X

ISSN electrónico

1741-3540

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/0256-307x/30/9/097101

First Principle Calculations of the Ground and Excited State Properties of RbPbF 3

Hayatullah; G. Murtaza; R. Khenata; S. Naeem; M. N. Khalid; S. Mohammad

Palabras clave: General Physics and Astronomy.

Pp. 097101

doi: 10.1088/0256-307x/30/9/097201

Wavevector Filtering through Monolayer and Bilayer Graphene Superlattices

F. Sattari; E. Faizabadi

Palabras clave: General Physics and Astronomy.

Pp. 097201

doi: 10.1088/0256-307x/30/9/097301

An All-Optical Diode Based on Plasmonic Attenuation and Nonlinear Frequency Conversion

Ming-Liang Ren; Xiao-Lan Zhong; Bao-Qin Chen; Zhi-Yuan Li

Palabras clave: General Physics and Astronomy.

Pp. 097301

doi: 10.1088/0256-307x/30/9/097302

The Application of a New Simulation Approach to Ferrimagnetic Nanowires

Zhao-Sen Liu; Cui-Hong Yang; Bin Gu; Rong Ma; Qing-Fang Li

Palabras clave: General Physics and Astronomy.

Pp. 097302

doi: 10.1088/0256-307x/30/9/097303

Improved Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors by Employing Polyimide/Chromium Composite Thin Films as Surface Passivation and High-Permittivity Field Plates

Fu-Tong Chu; Chao Chen; Wei Zhou; Xing-Zhao Liu

Palabras clave: General Physics and Astronomy.

Pp. 097303

doi: 10.1088/0256-307x/30/9/097304

Non-UV Photoelectric Properties of the Ni/n-Si/N + -SiC Isotype Heterostructure Schottky Barrier Photodiode

Lian-Bi Li; Zhi-Ming Chen; Zhan-Qiang Ren; Zhan-Jun Gao

Palabras clave: General Physics and Astronomy.

Pp. 097304

doi: 10.1088/0256-307x/30/9/097501

The Impact Induced Demagnetization Mechanism in NdFeB Permanent Magnets

Yan-Feng Li; Ming-Gang Zhu; Wei Li; Dong Zhou; Feng Lu; Lang Chen; Jun-Ying Wu; Yan Qi; An Du

Palabras clave: General Physics and Astronomy.

Pp. 097501

doi: 10.1088/0256-307x/30/9/097701

Temperature Dependence of the AlN E1(To) Phonon Decay, Thermal Expansion and Strain Effect in AlN/Sapphire by Infrared Reflection

Shu-Tong Zhou; Chen-Hui Yu; Bo Zhang

Palabras clave: General Physics and Astronomy.

Pp. 097701

doi: 10.1088/0256-307x/30/9/097801

Switching Plasmon Resonances by Polarization of the Incident Light in Metamolecules

Jian-Qiang Liu; Jing Chen; Dian-Yuan Wang; Yu-Xiu Zhou; Zhen-Hua Chen; Ling-Ling Wang

Palabras clave: General Physics and Astronomy.

Pp. 097801

doi: 10.1088/0256-307x/30/9/098101

Stress Distribution in GaN Films grown on Patterned Si (111) Substrates and Its Effect on LED Performance

Dan-Yang Chen; Li Wang; Chuan-Bing Xiong; Chang-Da Zheng; Chun-Lan Mo; Feng-Yi Jiang

Palabras clave: General Physics and Astronomy.

Pp. 098101