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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

Effects of transverse trapping on the ground state of a cigar-shaped two-component Bose—Einstein condensate

Guo-Dong Cui; Jian-Fang Sun; Bo-Nan Jiang; Jun Qian; Yu-Zhu Wang

Palabras clave: General Physics and Astronomy.

Pp. 096701

Extended Bose—Hubbard model with pair hopping on triangular lattice

Yan-Cheng Wang; Wan-Zhou Zhang; Hui Shao; Wen-An Guo

Palabras clave: General Physics and Astronomy.

Pp. 096702

Interaction and local magnetic moments of metal phthalocyanine and tetraphenylporphyrin molecules on noble metal surfaces

Bo-Qun Song; Li-Da Pan; Si-Xuan Du; Hong-Jun Gao

Palabras clave: General Physics and Astronomy.

Pp. 096801

Evolution behavior of catalytically activated replication—decline in a coagulation process

Yan Gao; Hai-Feng Wang; Ji-Dong Zhang; Xia Yang; Mao-Zhu Sun; Zhen-Quan Lin

Palabras clave: General Physics and Astronomy.

Pp. 096802

Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates

Li Huang; Wen-Yan Xu; Yan-De Que; Jin-Hai Mao; Lei Meng; Li-Da Pan; Geng Li; Ye-Liang Wang; Shi-Xuan Du; Yun-Qi Liu; Hong-Jun Gao

Palabras clave: General Physics and Astronomy.

Pp. 096803

Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

Kai-Liang Zhang; Kai Liu; Fang Wang; Fu-Hong Yin; Xiao-Ying Wei; Jin-Shi Zhao

Palabras clave: General Physics and Astronomy.

Pp. 097101

A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

Yong-Hui Deng; Gang Xie; Tao Wang; Kuang Sheng

Palabras clave: General Physics and Astronomy.

Pp. 097201

Electrostatic field effects on three-dimensional topological insulators

Wen-Min Yang; Chao-Jing Lin; Jian Liao; Yong-Qing Li

Palabras clave: General Physics and Astronomy.

Pp. 097202

Improved interface properties of an HfO2gate dielectric GaAs MOS device by using SiNxas an interfacial passivation layer

Shu-Yan Zhu; Jing-Ping Xu; Li-Sheng Wang; Yuan Huang

Palabras clave: General Physics and Astronomy.

Pp. 097301

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

Liu Zheng; Feng Zhang; Sheng-Bei Liu; Lin Dong; Xing-Fang Liu; Zhong-Chao Fan; Bin Liu; Guo-Guo Yan; Lei Wang; Wan-Shun Zhao; Guo-Sheng Sun; Zhi He; Fu-Hua Yang

Palabras clave: General Physics and Astronomy.

Pp. 097302