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Chinese Physics B
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.Palabras clave – provistas por la editorial
No disponibles.
Historia
Continúa: Chinese Physics
Disponibilidad
Institución detectada | Período | Navegá | Descargá | Solicitá |
---|---|---|---|---|
No detectada | desde ene. 2008 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
1674-1056
Editor responsable
Chinese Physical Society (CPS)
País de edición
China
Fecha de publicación
2008-
Cobertura temática
Tabla de contenidos
Effects of transverse trapping on the ground state of a cigar-shaped two-component Bose—Einstein condensate
Guo-Dong Cui; Jian-Fang Sun; Bo-Nan Jiang; Jun Qian; Yu-Zhu Wang
Palabras clave: General Physics and Astronomy.
Pp. 096701
Extended Bose—Hubbard model with pair hopping on triangular lattice
Yan-Cheng Wang; Wan-Zhou Zhang; Hui Shao; Wen-An Guo
Palabras clave: General Physics and Astronomy.
Pp. 096702
Interaction and local magnetic moments of metal phthalocyanine and tetraphenylporphyrin molecules on noble metal surfaces
Bo-Qun Song; Li-Da Pan; Si-Xuan Du; Hong-Jun Gao
Palabras clave: General Physics and Astronomy.
Pp. 096801
Evolution behavior of catalytically activated replication—decline in a coagulation process
Yan Gao; Hai-Feng Wang; Ji-Dong Zhang; Xia Yang; Mao-Zhu Sun; Zhen-Quan Lin
Palabras clave: General Physics and Astronomy.
Pp. 096802
Intercalation of metals and silicon at the interface of epitaxial graphene and its substrates
Li Huang; Wen-Yan Xu; Yan-De Que; Jin-Hai Mao; Lei Meng; Li-Da Pan; Geng Li; Ye-Liang Wang; Shi-Xuan Du; Yun-Qi Liu; Hong-Jun Gao
Palabras clave: General Physics and Astronomy.
Pp. 096803
Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory
Kai-Liang Zhang; Kai Liu; Fang Wang; Fu-Hong Yin; Xiao-Ying Wei; Jin-Shi Zhao
Palabras clave: General Physics and Astronomy.
Pp. 097101
A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain
Yong-Hui Deng; Gang Xie; Tao Wang; Kuang Sheng
Palabras clave: General Physics and Astronomy.
Pp. 097201
Electrostatic field effects on three-dimensional topological insulators
Wen-Min Yang; Chao-Jing Lin; Jian Liao; Yong-Qing Li
Palabras clave: General Physics and Astronomy.
Pp. 097202
Improved interface properties of an HfO2gate dielectric GaAs MOS device by using SiNxas an interfacial passivation layer
Shu-Yan Zhu; Jing-Ping Xu; Li-Sheng Wang; Yuan Huang
Palabras clave: General Physics and Astronomy.
Pp. 097301
High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions
Liu Zheng; Feng Zhang; Sheng-Bei Liu; Lin Dong; Xing-Fang Liu; Zhong-Chao Fan; Bin Liu; Guo-Guo Yan; Lei Wang; Wan-Shun Zhao; Guo-Sheng Sun; Zhi He; Fu-Hua Yang
Palabras clave: General Physics and Astronomy.
Pp. 097302