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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/21/9/096102

Ab initioinvestigation of the mechanical properties of copper

Yue-Lin Liu; Li-Jiang Gui; Shuo Jin

Palabras clave: General Physics and Astronomy.

Pp. 096102

doi: 10.1088/1674-1056/21/9/096801

Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing

Shao-Hui Chang; Xue-Chao Liu; Wei Huang; Ze Xiong; Jian-Hua Yang; Er-Wei Shi

Palabras clave: General Physics and Astronomy.

Pp. 096801

doi: 10.1088/1674-1056/21/9/097101

Structural, electronic, and magnetic properties of Co-doped ZnO

Bakhtiar Ul Haq; A. Afaq; R. Ahmed; S. Naseem

Palabras clave: General Physics and Astronomy.

Pp. 097101

doi: 10.1088/1674-1056/21/9/097102

Ab initio calculations of the elastic, electronic, optical, and vibrational properties of PdGa compound under pressure

H. Koc; A. Yildirim; E. Deligoz

Palabras clave: General Physics and Astronomy.

Pp. 097102

doi: 10.1088/1674-1056/21/9/097103

The electronic and magnetic properties of (Mn,C)-codoped ZnO diluted magnetic semiconductor

Long Zhao; Peng-Fei Lu; Zhong-Yuan Yu; Shi-Jia Ma; Lu Ding; Jian-Tao Liu

Palabras clave: General Physics and Astronomy.

Pp. 097103

doi: 10.1088/1674-1056/21/9/097104

A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics

Yuan-Jie Lü; Zhao-Jun Lin; Ying-Xia Yu; Ling-Guo Meng; Zhi-Fang Cao; Chong-Biao Luan; Zhan-Guo Wang

Palabras clave: General Physics and Astronomy.

Pp. 097104

doi: 10.1088/1674-1056/21/9/097105

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

Xiao-Yun Teng; Yan-Hua Wu; Wei Yu; Wei Gao; Guang-Sheng Fu

Palabras clave: General Physics and Astronomy.

Pp. 097105

doi: 10.1088/1674-1056/21/9/097201

Physical meaning of conductivity spectra for ZnO ceramics

Peng-Fei Cheng; Sheng-Tao Li; Jian-Ying Li; Can Ding; Yan Yang

Palabras clave: General Physics and Astronomy.

Pp. 097201

doi: 10.1088/1674-1056/21/9/097301

Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1−xN quantum wells

Jun Zhu; Shi-Liang Ban; Si-Hua Ha

Palabras clave: General Physics and Astronomy.

Pp. 097301

doi: 10.1088/1674-1056/21/9/097302

Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor

Xian-Jun Zhang; Yin-Tang Yang; Bao-Xing Duan; Chang-Chun Chai; Kun Song; Bin Chen

Palabras clave: General Physics and Astronomy.

Pp. 097302