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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/21/6/067202

Improved performance of organic light-emitting diodes with dual electron transporting layers

Zhi-Qiang Jiao; Xiao-Ming Wu; Yu-Lin Hua; Xue Mu; Wen-Tao Bi; Juan-Juan Bai; Shou-Gen Yin

Palabras clave: General Physics and Astronomy.

Pp. 067202

doi: 10.1088/1674-1056/21/6/067301

A comparative investigation of an AB- and AA-stacked bilayer graphene sheet under an applied electric field: A density functional theory study

Tao Wang; Qing Guo; Yan Liu; Kuang Sheng

Palabras clave: General Physics and Astronomy.

Pp. 067301

doi: 10.1088/1674-1056/21/6/067302

A density functional theory study on the adsorption of CO and O 2 on Cu-terminated Cu 2 O (111) surface

Min Li; Jun-Ying Zhang; Yue Zhang; Tian-Min Wang

Palabras clave: General Physics and Astronomy.

Pp. 067302

doi: 10.1088/1674-1056/21/6/067303

A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications

Jun-Rong Dong; Hao Yang; Chao Tian; Jie Huang; Hai-Ying Zhang

Palabras clave: General Physics and Astronomy.

Pp. 067303

doi: 10.1088/1674-1056/21/6/067304

Far-infrared electroluminescence characteristics of an Si-based photodiode under a forward DC bias current

Wen-Bo Xiao; Xing-Dao He; Zhi-Min Zhang; Yi-Qing Gao; Jiang-Tao Liu

Palabras clave: General Physics and Astronomy.

Pp. 067304

doi: 10.1088/1674-1056/21/6/067305

Performance of La 2 O 3 /InAlN/GaN metal—oxide—semiconductor high electron mobility transistors

Qian Feng; Qian Li; Tao Xing; Qiang Wang; Jin-Cheng Zhang; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 067305

doi: 10.1088/1674-1056/21/6/067306

Modulation of electrical and optical properties of gallium-doped ZnO films by radio frequency magnetron sputtering

Shuang Liang; Zeng-Xia Mei; Xiao-Long Du

Palabras clave: General Physics and Astronomy.

Pp. 067306

doi: 10.1088/1674-1056/21/6/067501

The mixed-spins 1/2 and 3/2 Blume—Capel model with a random crystal field

Erhan Albayrak

Palabras clave: General Physics and Astronomy.

Pp. 067501

doi: 10.1088/1674-1056/21/6/067502

Texture and self-biased property of an oriented M-type barium ferrite thick film by tape casting

Da-Ming Chen; Ying-Li Liu; Yuan-Xun Li; Kai Yang; Huai-Wu Zhang

Palabras clave: General Physics and Astronomy.

Pp. 067502

doi: 10.1088/1674-1056/21/6/067503

Defects mediated ferromagnetism in a V-doped 6H—SiC single crystal

Shi-Yi Zhuo; Xue-Chao Liu; Ze Xiong; Wen-Sheng Yan; Jun Xin; Jian-Hua Yang; Er-Wei Shi

Palabras clave: General Physics and Astronomy.

Pp. 067503