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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

Effects of swift argon-ion irradiation on the proton-exchanged LiNbO3crystal

Qing Huang; Peng Liu; Tao Liu; Sha-Sha Guo; Xue-Lin Wang

Palabras clave: General Physics and Astronomy.

Pp. 056103

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

Ying Wang; Wen-Li Jiao; Hai-Fan Hu; Yun-Tao Liu; Fei Cao

Palabras clave: General Physics and Astronomy.

Pp. 056104

First-principles investigation on the elastic stability and thermodynamic properties of Ti2SC

Ze-Jin Yang; Yun-Dong Guo; Rong-Feng Linghu; Xin-Lu Cheng; Xiang-Dong Yang

Palabras clave: General Physics and Astronomy.

Pp. 056301

Linear stability analysis on a spherical particle growing from a binary melt under the far-field flow

Bin Cao; Xin Lin; Meng Wang; Wei-Dong Huang

Palabras clave: General Physics and Astronomy.

Pp. 056401

Ab initio study of H and He migrations in β-phase Sc, Y, and Er hydrides

Ru-Cheng Chen; Li Yang; Yun-Ya Dai; Zi-Qiang Zhu; Shu-Ming Peng; Xing-Gui Long; Fei Gao; Xiao-Tao Zu

Palabras clave: General Physics and Astronomy.

Pp. 056601

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

Jie-Xin Luo; Jing Chen; Jian-Hua Zhou; Qing-Qing Wu; Zhan Chai; Tao Yu; Xi Wang

Palabras clave: General Physics and Astronomy.

Pp. 056602

Stabilization variation of organic conductor surfaces induced by π—π stacking interactions

Rui-Fen Dou; Feng Lin; Fu-Wei Liu; Yi Sun; Ji-Yong Yang; Bing-Fa Lin; Lin He; Chang-Min Xiong; Jia-Cai Nie

Palabras clave: General Physics and Astronomy.

Pp. 056801

Sudden birth and sudden death of thermal fidelity in a two-qubit system

Li-Guo Qin; Li-Jun Tian; Ying Jiang; Hong-Biao Zhang

Palabras clave: General Physics and Astronomy.

Pp. 057101

First-principles study of mechanical stability and thermal properties ofMNNi3(M= Zn, Mg, Al) under pressure

Hong-Cun Zhai; Xiao-Feng Li; Jun-Yi Du; Guang-Fu Ji

Palabras clave: General Physics and Astronomy.

Pp. 057102

Ak·panalytical model for valence band of biaxial strained Ge on (001) Si1−xGex

Guan-Yu Wang; He-Ming Zhang; Xiang Gao; Bin Wang; Chun-Yu Zhou

Palabras clave: General Physics and Astronomy.

Pp. 057103