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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/21/4/046103

Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

Xun Zhou; Zi-Jiang Luo; Xiang Guo; Bi-Chan Zhang; Lin-Tao Shang; Qing Zhou; Chao-Yong Deng; Zhao Ding

Palabras clave: General Physics and Astronomy.

Pp. 046103

doi: 10.1088/1674-1056/21/4/046501

The phase transition, hygroscopicity, and thermal expansion properties of Yb2−xAlxMo3O12

Qiu-Jie Li; Bao-He Yuan; Wen-Bo Song; Er-Jun Liang; Bin Yuan

Palabras clave: General Physics and Astronomy.

Pp. 046501

doi: 10.1088/1674-1056/21/4/046801

Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers

Xin Hao; Yuan-Fu Chen; Ping-Jian Li; Ze-Gao Wang; Jing-Bo Liu; Jia-Rui He; Rui Fan; Ji-Rong Sun; Wan-Li Zhang; Yan-Rong Li

Palabras clave: General Physics and Astronomy.

Pp. 046801

doi: 10.1088/1674-1056/21/4/047101

The stabilities, electronic structures and elastic properties of Rb—As systems

Havva Bogaz Ozisik; Kemal Colakoglu; Engin Deligoz; Haci Ozisik

Palabras clave: General Physics and Astronomy.

Pp. 047101

doi: 10.1088/1674-1056/21/4/047201

Oxygen vacancy formation and migration in Sr- and Mg-doped LaGaO3: a density functional theory study

Jie Zhang; Er-Jun Liang; Qiang Sun; Yu Jia

Palabras clave: General Physics and Astronomy.

Pp. 047201

doi: 10.1088/1674-1056/21/4/047202

The electrical properties of sulfur-implanted cubic boron nitride thin films

Jin-Xiang Deng; Yang Qin; Le Kong; Xue-Liang Yang; Ting Li; Wei-Ping Zhao; Ping Yang

Palabras clave: General Physics and Astronomy.

Pp. 047202

doi: 10.1088/1674-1056/21/4/047203

Charge transport and shot noise on the surface of a topological insulator with a magnetic modulation

Jian-Hui Yuan; Ze Cheng; Jian-Jun Zhang; Qi-Jun Zeng; Jun-Pei Zhang

Palabras clave: General Physics and Astronomy.

Pp. 047203

doi: 10.1088/1674-1056/21/4/047301

Homogeneous interface-type resistance switching in Au/La 0.67 Ca 0.33 MnO 3 /SrTiO

Ting Zhang; Ling-Hong Ding; Wei-Feng Zhang

Palabras clave: General Physics and Astronomy.

Pp. 047301

doi: 10.1088/1674-1056/21/4/047302

The influence of interfacial barrier engineering on the resistance switching of In 2 O 3 :SnO 2 /TiO

Zi-Yu Liu; Pei-Jian Zhang; Yang Meng; Dong Li; Qing-Yu Meng; Jian-Qi Li; Hong-Wu Zhao

Palabras clave: General Physics and Astronomy.

Pp. 047302

doi: 10.1088/1674-1056/21/4/047303

A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

Jian Zhang; Jin He; Xing-Ye Zhou; Li-Ning Zhang; Yu-Tao Ma; Qin Chen; Xu-Kai Zhang; Zhang Yang; Rui-Fei Wang; Yu Han; Mansun Chan

Palabras clave: General Physics and Astronomy.

Pp. 047303