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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/20/8/087302

Tuning of plasmonic behaviours in coupled metallic nanotube arrays

Shao-Li Fu; Hong-Jian Li; Su-Xia Xie; Xin Zhou; Hai-Qing Xu; Hui Xia

Palabras clave: General Physics and Astronomy.

Pp. 087302

doi: 10.1088/1674-1056/20/8/087303

Dependence of the electrical properties of defective single-walled carbon nanotubes on the vacancy density

Yu-Pin Luo; Li-Gan Tien; Chuen-Horng Tsai; Ming-Hsien Lee; Feng-Yin Li

Palabras clave: General Physics and Astronomy.

Pp. 087303

doi: 10.1088/1674-1056/20/8/087304

Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics

Wei-Yi Li; Guo-Ping Ru; Yu-Long Jiang; Gang Ruan

Palabras clave: General Physics and Astronomy.

Pp. 087304

doi: 10.1088/1674-1056/20/8/087305

Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

Yue-Hu Wang; Yi-Men Zhang; Yu-Ming Zhang; Qing-Wen Song; Ren-Xu Jia

Palabras clave: General Physics and Astronomy.

Pp. 087305

doi: 10.1088/1674-1056/20/8/087306

Top contact organic field effect transistors fabricated using a photolithographic process

Hong Wang; Zhuo-Yu Ji; Li-Wei Shang; Xing-Hua Liu; Ying-Quan Peng; Ming Liu

Palabras clave: General Physics and Astronomy.

Pp. 087306

doi: 10.1088/1674-1056/20/8/087307

Investigation of passivation effects in AlGaN/GaN metal—insulator—semiconductor high electron-mobility transistor by gate—drain conductance dispersion study

Zhi-Wei Bi; Zhen-Hua Hu; Wei Mao; Yue Hao; Qian Feng; Yan-Rong Cao; Zhi-Yuan Gao; Jin-Cheng Zhang; Xiao-Hua Ma; Yong-Ming Chang; Zhi-Ming Li; Nan Mei

Palabras clave: General Physics and Astronomy.

Pp. 087307

doi: 10.1088/1674-1056/20/8/087308

Modulation transfer function characteristic of uniform-doping transmission-mode GaAs/GaAlAs photocathode

Ling Ren; Ben-Kang Chang

Palabras clave: General Physics and Astronomy.

Pp. 087308

doi: 10.1088/1674-1056/20/8/087309

Open-circuit voltage analysis of p—i—n type amorphous silicon solar cells deposited at low temperature

Jian Ni; Jian-Jun Zhang; Yu Cao; Xian-Bao Wang; Chao Li; Xin-Liang Chen; Xin-Hua Geng; Ying Zhao

Palabras clave: General Physics and Astronomy.

Pp. 087309

doi: 10.1088/1674-1056/20/8/087501

Magnetic and transport properties of bilayered manganites La 1.2 Sr 1.8 Mn 2− x<

Lin Zheng; Min Zhou; Jian-Jun Zhao; Zhao-Hua Cheng; Xiang-Qun Zhang; Ru Xing; Xue-Feng Zhang; Yi Lu

Palabras clave: General Physics and Astronomy.

Pp. 087501

doi: 10.1088/1674-1056/20/8/087502

Effects of the Mn/Co ratio on the magnetic transition and magnetocaloric properties of Mn 1+ x Co

Sheng-Can Ma; Dun-Hui Wang; Hai-Cheng Xuan; Ling-Jia Shen; Qing-Qi Cao; You-Wei Du

Palabras clave: General Physics and Astronomy.

Pp. 087502