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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/19/9/097202

A new model for electromigration grain boundary noise based on free volume

He Liang; Du Lei; Zhuang Yi-Qi; Chen Hua; Chen Wen-Hao; Li Wei-Hua; Sun Peng

Palabras clave: General Physics and Astronomy.

Pp. 097202

doi: 10.1088/1674-1056/19/9/097301

Negative differential resistance behaviour in N-doped crossed graphene nanoribbons

Chen Ling-Na; Ma Song-Shan; Ouyang Fang-Ping; Wu Xiao-Zan; Xiao Jin; Xu Hui

Palabras clave: General Physics and Astronomy.

Pp. 097301

doi: 10.1088/1674-1056/19/9/097302

The physical process analysis of the capacitance—voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

Wang Xin-Hua; Zhao Miao; Liu Xin-Yu; Pu Yan; Zheng Ying-Kui; Wei Ke

Palabras clave: General Physics and Astronomy.

Pp. 097302

doi: 10.1088/1674-1056/19/9/097303

The dispersion relations for surface plasmon in a nonlinear–metal–nonlinear dielectric structure

Liu Bing-Can; Yu Li; Lu Zhi-Xin; Zhang Kai

Palabras clave: General Physics and Astronomy.

Pp. 097303

doi: 10.1088/1674-1056/19/9/097304

Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height

Ru Guo-Ping; Yu Rong; Jiang Yu-Long; Ruan Gang

Palabras clave: General Physics and Astronomy.

Pp. 097304

doi: 10.1088/1674-1056/19/9/097305

Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

Li Chun-Wei; Zhu Yan-Xu; Shen Guang-Di; Zhang Yong-Hui; Qin Yuan; Gao Wei; Jiang Wen-Jing; Zhou De-Shu

Palabras clave: General Physics and Astronomy.

Pp. 097305

doi: 10.1088/1674-1056/19/9/097306

The study on mechanism and model of negative bias temperature instability degradation in P-channel metal–oxide–semiconductor field-effect transistors

Cao Yan-Rong; Ma Xiao-Hua; Hao Yue; Tian Wen-Chao

Palabras clave: General Physics and Astronomy.

Pp. 097306

doi: 10.1088/1674-1056/19/9/097307

Fabrication of suspended graphene devices and their electronic properties

Li Qiang; Cheng Zeng-Guang; Li Zhong-Jun; Wang Zhi-Hua; Fang Ying

Palabras clave: General Physics and Astronomy.

Pp. 097307

doi: 10.1088/1674-1056/19/9/097401

High frequency behaviours and Mössbauer study of field annealed FeCuNbSiB alloy ribbons

Ma Xiao-Ming; Li Zhi-Wei; Wei Jian-Qiang; Wang Tao; Li Fa-Shen

Palabras clave: General Physics and Astronomy.

Pp. 097401

doi: 10.1088/1674-1056/19/9/097501

Magnetic hysteresis and refrigeration capacity of Ni–Mn–Ga alloys near Martensitic transformation

Fu Bin; Long Yi; Duan Jing-Fang; Wang Chao-Lun; Chang Yong-Qin; Ye Rong-Chang; Wu Guang-Heng

Palabras clave: General Physics and Astronomy.

Pp. 097501