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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/19/5/057204

Fabrication of a 256-bits organic memory by soft x-ray lithography

Liu Xing-Hua; Lu Wen-Sheng; Ji Zhuo-Yu; Tu De-Yu; Zhu Xiao-Li; Xie Chang-Qing; Liu Ming

Palabras clave: General Physics and Astronomy.

Pp. 057204

doi: 10.1088/1674-1056/19/5/057205

The effect of initial discharge conditions on the properties of microcrystalline silicon thin films and solar cells

Chen Yong-Sheng; Yang Shi-E; Wang Jian-Hua; Lu Jing-Xiao; Gao Xiao-Yong; Gu Jin-Hua

Palabras clave: General Physics and Astronomy.

Pp. 057205

doi: 10.1088/1674-1056/19/5/057206

Size effect of quantum conductance in carbon nanotube Y-Junctions

Liu Hong

Palabras clave: General Physics and Astronomy.

Pp. 057206

doi: 10.1088/1674-1056/19/5/057301

The initial decoherence of the mesoscopic Josephson junction flux qubit

Su Jie; Wang Ji-Suo; Zhang Xiao-Yan; Liang Bao-Long

Palabras clave: General Physics and Astronomy.

Pp. 057301

doi: 10.1088/1674-1056/19/5/057302

Comparative studies of Ge and Si p-channel metal–oxide–semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate

Hu Ai-Bin; Xu Qiu-Xia

Palabras clave: General Physics and Astronomy.

Pp. 057302

doi: 10.1088/1674-1056/19/5/057303

Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures

Liu Hong-Xia; Wu Xiao-Feng; Hu Shi-Gang; Shi Li-Chun

Palabras clave: General Physics and Astronomy.

Pp. 057303

doi: 10.1088/1674-1056/19/5/057304

Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

Du Gang; Liu Xiao-Yan; Xia Zhi-Liang; Yang Jing-Feng; Han Ru-Qi

Palabras clave: General Physics and Astronomy.

Pp. 057304

doi: 10.1088/1674-1056/19/5/057501

Giant magnetocaloric effect in Tb 5 Ge 2– x Si

E Yüzüak; B Emre; Y Elerman; A Yücel

Palabras clave: General Physics and Astronomy.

Pp. 057501

doi: 10.1088/1674-1056/19/5/057502

First-order reversal curves of magnetic recording tapes

Yin Jin-Hua; Pan Li-Qing

Palabras clave: General Physics and Astronomy.

Pp. 057502

doi: 10.1088/1674-1056/19/5/057701

Effect of F doping on capacitance–voltage characteristics of SiCOH low- k films metal–insulator–semiconductor structure

Ye Chao; Ning Zhao-Yuan

Palabras clave: General Physics and Astronomy.

Pp. 057701